III-V-on-silicon widely tunable laser realized using micro-tranfer-printing

Jing Zhang; Agnieszka Gocalinkska; Emanuele Pelucchi; Joris van Campenhout; Guy Lepage; Peter Verheyen; Brian Corbett; Gunther Roelkens

III-V-on-silicon widely tunable laser realized using micro-tranfer-printing

Jing Zhang
, Agnieszka Gocalinkska
, Emanuele Pelucchi
, Joris van Campenhout
, Guy Lepage
, Peter Verheyen
, Brian Corbett
, Gunther Roelkens

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We present a C-band widely-tunable III-V-on-silicon laser (50 nm tuning, 5.2 dBm maximum power, 300 kHz minimum linewidth) realized through a micro-transfer-printing approach, in which III-V SOAs are pre-fabricated on a III-V substrate transferred using an elastomeric stamp to the silicon photonic circuit defining the laser cavity.

Original language	English
Title of host publication	IET Conference Publications
Publisher	Institution of Engineering and Technology
Edition	CP765
ISBN (Electronic)	9781839530074, 9781839530661, 9781839530883, 9781839530890, 9781839531071, 9781839531088, 9781839531255, 9781839531705, 9781839531859
Publication status	Published - 2019
Event	45th European Conference on Optical Communication, ECOC 2019 - Dublin, Ireland Duration: 22 Sep 2019 → 26 Sep 2019

Publication series

Name	IET Conference Publications
Number	CP765
Volume	2019

Conference

Conference	45th European Conference on Optical Communication, ECOC 2019
Country/Territory	Ireland
City	Dublin
Period	22/09/19 → 26/09/19

Keywords

III-V semiconductor materials
Semiconductor lasers
Silicon Photonics

Cite this

@inproceedings{0797351e6c824f1588e18e2c51063668,

title = "III-V-on-silicon widely tunable laser realized using micro-tranfer-printing",

abstract = "We present a C-band widely-tunable III-V-on-silicon laser (50 nm tuning, 5.2 dBm maximum power, 300 kHz minimum linewidth) realized through a micro-transfer-printing approach, in which III-V SOAs are pre-fabricated on a III-V substrate transferred using an elastomeric stamp to the silicon photonic circuit defining the laser cavity.",

keywords = "III-V semiconductor materials, Semiconductor lasers, Silicon Photonics",

author = "Jing Zhang and Agnieszka Gocalinkska and Emanuele Pelucchi and \{van Campenhout\}, Joris and Guy Lepage and Peter Verheyen and Brian Corbett and Gunther Roelkens",

note = "Publisher Copyright: {\textcopyright} 2019 Institution of Engineering and Technology. All rights reserved.; 45th European Conference on Optical Communication, ECOC 2019 ; Conference date: 22-09-2019 Through 26-09-2019",

year = "2019",

language = "English",

series = "IET Conference Publications",

publisher = "Institution of Engineering and Technology",

number = "CP765",

booktitle = "IET Conference Publications",

address = "United Kingdom",

edition = "CP765",

}

Zhang, J, Gocalinkska, A, Pelucchi, E, van Campenhout, J, Lepage, G, Verheyen, P, Corbett, B & Roelkens, G 2019, III-V-on-silicon widely tunable laser realized using micro-tranfer-printing. in IET Conference Publications. CP765 edn, IET Conference Publications, no. CP765, vol. 2019, Institution of Engineering and Technology, 45th European Conference on Optical Communication, ECOC 2019, Dublin, Ireland, 22/09/19.

III-V-on-silicon widely tunable laser realized using micro-tranfer-printing. / Zhang, Jing; Gocalinkska, Agnieszka; Pelucchi, Emanuele et al.
IET Conference Publications. CP765. ed. Institution of Engineering and Technology, 2019. (IET Conference Publications; Vol. 2019, No. CP765).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - III-V-on-silicon widely tunable laser realized using micro-tranfer-printing

AU - Zhang, Jing

AU - Gocalinkska, Agnieszka

AU - Pelucchi, Emanuele

AU - van Campenhout, Joris

AU - Lepage, Guy

AU - Verheyen, Peter

AU - Corbett, Brian

AU - Roelkens, Gunther

PY - 2019

Y1 - 2019

N2 - We present a C-band widely-tunable III-V-on-silicon laser (50 nm tuning, 5.2 dBm maximum power, 300 kHz minimum linewidth) realized through a micro-transfer-printing approach, in which III-V SOAs are pre-fabricated on a III-V substrate transferred using an elastomeric stamp to the silicon photonic circuit defining the laser cavity.

AB - We present a C-band widely-tunable III-V-on-silicon laser (50 nm tuning, 5.2 dBm maximum power, 300 kHz minimum linewidth) realized through a micro-transfer-printing approach, in which III-V SOAs are pre-fabricated on a III-V substrate transferred using an elastomeric stamp to the silicon photonic circuit defining the laser cavity.

KW - III-V semiconductor materials

KW - Semiconductor lasers

KW - Silicon Photonics

UR - https://www.scopus.com/pages/publications/85086904014

M3 - Conference proceeding

AN - SCOPUS:85086904014

T3 - IET Conference Publications

BT - IET Conference Publications

PB - Institution of Engineering and Technology

T2 - 45th European Conference on Optical Communication, ECOC 2019

Y2 - 22 September 2019 through 26 September 2019

ER -

III-V-on-silicon widely tunable laser realized using micro-tranfer-printing

Abstract

Publication series

Conference

Keywords

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