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III-V selective area growth and epitaxial functional oxides on Si: From Electronic to Photonic devices

  • C. Merckling
  • , Z. Liu
  • , M. Hsu
  • , S. Hasan
  • , S. Jiang
  • , S. El-Kazzi
  • , G. Boccardi
  • , N. Waldron
  • , Z. Wang
  • , B. Tian
  • , M. Pantouvaki
  • , J. Van Campenhout
  • , N. Collaert
  • , M. Heyns
  • , D. Van Thourhout
  • , W. Vandervorst
  • , A. Thean

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

This review paper presents the challenges for the monolithic integration on silicon substrate by heteroepitaxy of III-V semiconductors selective area growth as well as epitaxial functional oxides. The heteroepitaxy of these materials on a common Si platform would allow the integration of new functionalities and advanced devices in both electronic and photonic areas.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 7
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
EditorsD. Misra, D. Bauza, Z. Chen, K. B. Sundaram, Y. S. Obeng, T. Chikyow, H. Iwai
PublisherElectrochemical Society Inc.
Pages59-69
Number of pages11
Edition2
ISBN (Electronic)9781607687122
DOIs
Publication statusPublished - 2016
Externally publishedYes
EventSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting - San Diego, United States
Duration: 29 May 20162 Jun 2016

Publication series

NameECS Transactions
Number2
Volume72
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting
Country/TerritoryUnited States
CitySan Diego
Period29/05/162/06/16

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