@inproceedings{d41d842e0efe4b11ac27077b96fcfe9f,
title = "Impact of Device Geometry, Physical Doping and Electrostatic Doping on the Frequency CV-dispersion of TFT Devices with IWO Channels",
abstract = "Using combined experimental and modeling techniques, we analyze nonidealities in the oxide semiconductor channel devices. We focus on the IWO-based TFTs (fabricated in BEOL) with excellent switching properties and deconvolute frequency dispersion of CV/GV, observed under different measurement condition and attribute it to the non-idealities in the S/D extension and electrostatic doping impacting the TFT's response. Finally, we show importance of physical doping in suppression of the observed dispersion.",
keywords = "IWO, logic, Scaling, split-CV, TFT",
author = "Andrea Palmieri and Karim Cherkaoui and Aabrar, \{Khandker Akif\} and Yaoqiao Hu and Luca Larcher and Kyeongjae Cho and Suman Datta and Paul Hurley and Milan Pesic",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",
year = "2023",
doi = "10.1109/EDTM55494.2023.10438104",
language = "English",
series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",
address = "United States",
}