Impact of Forming Gas Annealing on the Performance of Surface-Channel $$\backslash$hbox ${$In$}$ _ ${$0.53$}$$\backslash$hbox ${$Ga$}$ _ ${$0.47$}$$\backslash$hbox ${$As$}$ $ MOSFETs With an ALD $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$ $ Gate Dielectric

Ailbe O'Manachain

Impact of Forming Gas Annealing on the Performance of Surface-Channel $$\backslash$hbox ${$In$}$ _ ${$0.53$}$$\backslash$hbox ${$Ga$}$ _ ${$0.47$}$$\backslash$hbox ${$As$}$ $ MOSFETs With an ALD $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$ $ Gate Dielectric

Ailbe O'Manachain

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	IEEE Transactions on Electron Devices
Publication status	Published - 2012

Cite this

@article{d6c5f02dc1ba4887926463a88464ded0,

title = "Impact of Forming Gas Annealing on the Performance of Surface-Channel \$\$\textbackslash{}backslash\$hbox \$\{\$In\$\}\$ \_ \$\{\$0.53\$\}\$\$\textbackslash{}backslash\$hbox \$\{\$Ga\$\}\$ \_ \$\{\$0.47\$\}\$\$\textbackslash{}backslash\$hbox \$\{\$As\$\}\$ \$ MOSFETs With an ALD \$\$\textbackslash{}backslash\$hbox \$\{\$Al\$\}\$ \_ \$\{\$2\$\}\$\$\textbackslash{}backslash\$hbox \$\{\$O\$\}\$ \_ \$\{\$3\$\}\$ \$ Gate Dielectric",

author = "Ailbe O'Manachain",

year = "2012",

language = "Undefined/Unknown",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Impact of Forming Gas Annealing on the Performance of Surface-Channel $$\backslash$hbox ${$In$}$ _ ${$0.53$}$$\backslash$hbox ${$Ga$}$ _ ${$0.47$}$$\backslash$hbox ${$As$}$ $ MOSFETs With an ALD $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$ $ Gate Dielectric. / O'Manachain, Ailbe.
In: IEEE Transactions on Electron Devices, 2012.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Impact of Forming Gas Annealing on the Performance of Surface-Channel $$\backslash$hbox ${$In$}$ _ ${$0.53$}$$\backslash$hbox ${$Ga$}$ _ ${$0.47$}$$\backslash$hbox ${$As$}$ $ MOSFETs With an ALD $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$ $ Gate Dielectric

AU - O'Manachain, Ailbe

PY - 2012

Y1 - 2012

M3 - Article

SN - 0018-9383

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -