Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2012.2185242
Publication status	Published - 2012

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@article{604f16f78a904ee08827eea03a49583a,

title = "Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric",

author = "Ailbe O'Manachain",

year = "2012",

doi = "10.1109/TED.2012.2185242",

language = "Undefined/Unknown",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}