Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric

Vladimir Djara; Karim Cherkaoui; Michael Schmidt; Scott Monaghan; Éamon O'Connor; Ian Povey; Dan O'Connell; Martyn E Pemble; Paul K Hurley

Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric

Vladimir Djara
, Karim Cherkaoui
, Michael Schmidt
, Scott Monaghan
, Éamon O'Connor
, Ian Povey
, Dan O'Connell
, Martyn E Pemble
, Paul K Hurley

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Meeting Abstracts
Publication status	Published - 2012

Cite this

@article{8d547158e5894b89886c1b7938874abb,

title = "Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric",

author = "Vladimir Djara and Karim Cherkaoui and Michael Schmidt and Scott Monaghan and {\'E}amon O'Connor and Ian Povey and Dan O'Connell and Pemble, \{Martyn E\} and Hurley, \{Paul K\}",

year = "2012",

language = "Undefined/Unknown",

journal = "Meeting Abstracts",

issn = "1091-8213",

}

TY - JOUR

T1 - Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric

AU - Djara, Vladimir

AU - Cherkaoui, Karim

AU - Schmidt, Michael

AU - Monaghan, Scott

AU - O'Connor, Éamon

AU - Povey, Ian

AU - O'Connell, Dan

AU - Pemble, Martyn E

AU - Hurley, Paul K

PY - 2012

Y1 - 2012

M3 - Article

SN - 1091-8213

JO - Meeting Abstracts

JF - Meeting Abstracts

ER -