Impact of Forming Gas Annealing on the Performance of Surface-Channel $$\backslash$hbox ${$In$}$ _ ${$0.53$}$$\backslash$hbox ${$Ga$}$ _ ${$0.47$}$$\backslash$hbox ${$As$}$ $ MOSFETs With an ALD $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$ $ Gate Dielectric

Vladimir Djara; Karim Cherkaoui; Michael Schmidt; Scott Monaghan; Éamon O'Connor; Ian M Povey; Dan O'Connell; Martyn E Pemble; Paul K Hurley

Impact of Forming Gas Annealing on the Performance of Surface-Channel $$\backslash$hbox ${$In$}$ _ ${$0.53$}$$\backslash$hbox ${$Ga$}$ _ ${$0.47$}$$\backslash$hbox ${$As$}$ $ MOSFETs With an ALD $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$ $ Gate Dielectric

Vladimir Djara
, Karim Cherkaoui
, Michael Schmidt
, Scott Monaghan
, Éamon O'Connor
, Ian M Povey
, Dan O'Connell
, Martyn E Pemble
, Paul K Hurley

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	IEEE Transactions on Electron Devices
Publication status	Published - 2012

Cite this

Djara, V., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I. M., O'Connell, D., Pemble, M. E., & Hurley, P. K. (2012). Impact of Forming Gas Annealing on the Performance of Surface-Channel $$\backslash$hbox ${$In$}$ _ ${$0.53$}$$\backslash$hbox ${$Ga$}$ _ ${$0.47$}$$\backslash$hbox ${$As$}$ $ MOSFETs With an ALD $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$ $ Gate Dielectric. IEEE Transactions on Electron Devices.

Djara, Vladimir ; Cherkaoui, Karim ; Schmidt, Michael et al. / Impact of Forming Gas Annealing on the Performance of Surface-Channel $$\backslash$hbox ${$In$}$ _ ${$0.53$}$$\backslash$hbox ${$Ga$}$ _ ${$0.47$}$$\backslash$hbox ${$As$}$ $ MOSFETs With an ALD $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$ $ Gate Dielectric. In: IEEE Transactions on Electron Devices. 2012.

@article{ee7c828a02554145842936795a29a477,

title = "Impact of Forming Gas Annealing on the Performance of Surface-Channel \$\$\textbackslash{}backslash\$hbox \$\{\$In\$\}\$ \_ \$\{\$0.53\$\}\$\$\textbackslash{}backslash\$hbox \$\{\$Ga\$\}\$ \_ \$\{\$0.47\$\}\$\$\textbackslash{}backslash\$hbox \$\{\$As\$\}\$ \$ MOSFETs With an ALD \$\$\textbackslash{}backslash\$hbox \$\{\$Al\$\}\$ \_ \$\{\$2\$\}\$\$\textbackslash{}backslash\$hbox \$\{\$O\$\}\$ \_ \$\{\$3\$\}\$ \$ Gate Dielectric",

author = "Vladimir Djara and Karim Cherkaoui and Michael Schmidt and Scott Monaghan and {\'E}amon O'Connor and Povey, \{Ian M\} and Dan O'Connell and Pemble, \{Martyn E\} and Hurley, \{Paul K\}",

year = "2012",

language = "Undefined/Unknown",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Djara, V, Cherkaoui, K, Schmidt, M, Monaghan, S, O'Connor, É, Povey, IM , O'Connell, D, Pemble, ME & Hurley, PK 2012, 'Impact of Forming Gas Annealing on the Performance of Surface-Channel $$\backslash$hbox ${$In$}$ _ ${$0.53$}$$\backslash$hbox ${$Ga$}$ _ ${$0.47$}$$\backslash$hbox ${$As$}$ $ MOSFETs With an ALD $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$ $ Gate Dielectric', IEEE Transactions on Electron Devices.

Impact of Forming Gas Annealing on the Performance of Surface-Channel $$\backslash$hbox ${$In$}$ _ ${$0.53$}$$\backslash$hbox ${$Ga$}$ _ ${$0.47$}$$\backslash$hbox ${$As$}$ $ MOSFETs With an ALD $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$ $ Gate Dielectric. / Djara, Vladimir; Cherkaoui, Karim; Schmidt, Michael et al.
In: IEEE Transactions on Electron Devices, 2012.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Impact of Forming Gas Annealing on the Performance of Surface-Channel $$\backslash$hbox ${$In$}$ _ ${$0.53$}$$\backslash$hbox ${$Ga$}$ _ ${$0.47$}$$\backslash$hbox ${$As$}$ $ MOSFETs With an ALD $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$ $ Gate Dielectric

AU - Djara, Vladimir

AU - Cherkaoui, Karim

AU - Schmidt, Michael

AU - Monaghan, Scott

AU - O'Connor, Éamon

AU - Povey, Ian M

AU - O'Connell, Dan

AU - Pemble, Martyn E

AU - Hurley, Paul K

PY - 2012

Y1 - 2012

M3 - Article

SN - 0018-9383

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

Djara V, Cherkaoui K, Schmidt M, Monaghan S, O'Connor É, Povey IM et al. Impact of Forming Gas Annealing on the Performance of Surface-Channel $$\backslash$hbox ${$In$}$ _ ${$0.53$}$$\backslash$hbox ${$Ga$}$ _ ${$0.47$}$$\backslash$hbox ${$As$}$ $ MOSFETs With an ALD $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$ $ Gate Dielectric. IEEE Transactions on Electron Devices. 2012.