Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks

M. Schmidt; M. C. Lemme; H. Kurz; T. Witters; T. Schram; K. Cherkaoui; A. Negara; P. K. Hurley

doi:10.1016/j.mee.2005.04.023

Impact of H₂/N₂ annealing on interface defect densities in Si(100)/SiO₂/HfO₂/TiN gate stacks

M. Schmidt
, M. C. Lemme
, H. Kurz
, T. Witters
, T. Schram
, K. Cherkaoui
, A. Negara
, P. K. Hurley

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports on the influence of forming gas annealing (5%H ₂/95%N₂) over the temperature range 350 °C-550 °C on the density of electrically active interface states in Si(100)/SiO ₂/HfO₂/TiN gate stacks. Prior to forming gas annealing the distribution of interface states across the energy gap exhibits the electrical signature of the P_b0 dangling bond centre for the hydrogen free Si(100)/SiO₂ interface. Forming gas annealing at 350 °C and 400 °C results in a reduction of the interface state density, with an increase in interface state density for forming gas anneals in the range 450 °C-550 °C. The effect of the cooling ambient for the forming gas anneal (N ₂ or H₂/N₂) is also reported.

Original language	English
Pages (from-to)	70-73
Number of pages	4
Journal	Microelectronic Engineering
Volume	80
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/j.mee.2005.04.023
Publication status	Published - 17 Jun 2005
Event	14th Biennial Conference on Insulating Films on Semiconductors - Duration: 22 Jun 2005 → 24 Jun 2005

Keywords

Forming gas annealing
High dielectric constant thin films
Interface states
Si(100)/SiO/HfO /TiN gate stacks

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10.1016/j.mee.2005.04.023

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@article{312acc70aa0d4aa1b5b6837b4fb5a3b3,

title = "Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks",

abstract = "This paper reports on the influence of forming gas annealing (5\%H 2/95\%N2) over the temperature range 350 °C-550 °C on the density of electrically active interface states in Si(100)/SiO 2/HfO2/TiN gate stacks. Prior to forming gas annealing the distribution of interface states across the energy gap exhibits the electrical signature of the Pb0 dangling bond centre for the hydrogen free Si(100)/SiO2 interface. Forming gas annealing at 350 °C and 400 °C results in a reduction of the interface state density, with an increase in interface state density for forming gas anneals in the range 450 °C-550 °C. The effect of the cooling ambient for the forming gas anneal (N 2 or H2/N2) is also reported.",

keywords = "Forming gas annealing, High dielectric constant thin films, Interface states, Si(100)/SiO/HfO /TiN gate stacks",

author = "M. Schmidt and Lemme, \{M. C.\} and H. Kurz and T. Witters and T. Schram and K. Cherkaoui and A. Negara and Hurley, \{P. K.\}",

year = "2005",

month = jun,

day = "17",

doi = "10.1016/j.mee.2005.04.023",

language = "English",

volume = "80",

pages = "70--73",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "SUPPL.",

note = "14th Biennial Conference on Insulating Films on Semiconductors ; Conference date: 22-06-2005 Through 24-06-2005",

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TY - JOUR

T1 - Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks

AU - Schmidt, M.

AU - Lemme, M. C.

AU - Kurz, H.

AU - Witters, T.

AU - Schram, T.

AU - Cherkaoui, K.

AU - Negara, A.

AU - Hurley, P. K.

PY - 2005/6/17

Y1 - 2005/6/17

N2 - This paper reports on the influence of forming gas annealing (5%H 2/95%N2) over the temperature range 350 °C-550 °C on the density of electrically active interface states in Si(100)/SiO 2/HfO2/TiN gate stacks. Prior to forming gas annealing the distribution of interface states across the energy gap exhibits the electrical signature of the Pb0 dangling bond centre for the hydrogen free Si(100)/SiO2 interface. Forming gas annealing at 350 °C and 400 °C results in a reduction of the interface state density, with an increase in interface state density for forming gas anneals in the range 450 °C-550 °C. The effect of the cooling ambient for the forming gas anneal (N 2 or H2/N2) is also reported.

AB - This paper reports on the influence of forming gas annealing (5%H 2/95%N2) over the temperature range 350 °C-550 °C on the density of electrically active interface states in Si(100)/SiO 2/HfO2/TiN gate stacks. Prior to forming gas annealing the distribution of interface states across the energy gap exhibits the electrical signature of the Pb0 dangling bond centre for the hydrogen free Si(100)/SiO2 interface. Forming gas annealing at 350 °C and 400 °C results in a reduction of the interface state density, with an increase in interface state density for forming gas anneals in the range 450 °C-550 °C. The effect of the cooling ambient for the forming gas anneal (N 2 or H2/N2) is also reported.

KW - Forming gas annealing

KW - High dielectric constant thin films

KW - Interface states

KW - Si(100)/SiO/HfO /TiN gate stacks

UR - https://www.scopus.com/pages/publications/19944389275

U2 - 10.1016/j.mee.2005.04.023

DO - 10.1016/j.mee.2005.04.023

M3 - Article

AN - SCOPUS:19944389275

SN - 0167-9317

VL - 80

SP - 70

EP - 73

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - SUPPL.

T2 - 14th Biennial Conference on Insulating Films on Semiconductors

Y2 - 22 June 2005 through 24 June 2005

ER -

Impact of H₂/N₂ annealing on interface defect densities in Si(100)/SiO₂/HfO₂/TiN gate stacks

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Keywords

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