Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy

V. Dimastrodonato; L. O. Mereni; G. Juska; E. Pelucchi

doi:10.1063/1.3481675

Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy

V. Dimastrodonato
, L. O. Mereni
, G. Juska
, E. Pelucchi

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

We report on some surprising optical properties of diluted nitride InGaAs_1-εN_ε/GaAs (ε ≪ 1) pyramidal site-controlled quantum dots, grown by metalorganic vapor phase epitaxy on patterned GaAs (111)B substrates. Microphotoluminescence characterizations showed antibinding exciton/biexciton behavior, a spread of exciton lifetimes in an otherwise very uniform sample, with unexpected long neutral exciton lifetimes (up to 7 ns) and a nearly zero fine structure splitting on a majority of dots.

Original language	English
Article number	072115
Journal	Applied Physics Letters
Volume	97
Issue number	7
DOIs	https://doi.org/10.1063/1.3481675
Publication status	Published - 16 Aug 2010

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10.1063/1.3481675

https://hdl.handle.net/10468/4335Licence: CC BY-NC-ND

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abstract = "We report on some surprising optical properties of diluted nitride InGaAs1-εNε/GaAs (ε ≪ 1) pyramidal site-controlled quantum dots, grown by metalorganic vapor phase epitaxy on patterned GaAs (111)B substrates. Microphotoluminescence characterizations showed antibinding exciton/biexciton behavior, a spread of exciton lifetimes in an otherwise very uniform sample, with unexpected long neutral exciton lifetimes (up to 7 ns) and a nearly zero fine structure splitting on a majority of dots.",

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AU - Pelucchi, E.

PY - 2010/8/16

Y1 - 2010/8/16

N2 - We report on some surprising optical properties of diluted nitride InGaAs1-εNε/GaAs (ε ≪ 1) pyramidal site-controlled quantum dots, grown by metalorganic vapor phase epitaxy on patterned GaAs (111)B substrates. Microphotoluminescence characterizations showed antibinding exciton/biexciton behavior, a spread of exciton lifetimes in an otherwise very uniform sample, with unexpected long neutral exciton lifetimes (up to 7 ns) and a nearly zero fine structure splitting on a majority of dots.

AB - We report on some surprising optical properties of diluted nitride InGaAs1-εNε/GaAs (ε ≪ 1) pyramidal site-controlled quantum dots, grown by metalorganic vapor phase epitaxy on patterned GaAs (111)B substrates. Microphotoluminescence characterizations showed antibinding exciton/biexciton behavior, a spread of exciton lifetimes in an otherwise very uniform sample, with unexpected long neutral exciton lifetimes (up to 7 ns) and a nearly zero fine structure splitting on a majority of dots.

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U2 - 10.1063/1.3481675

DO - 10.1063/1.3481675

M3 - Article

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Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy

Abstract

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