Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys

  • E. P. O'Reilly
  • , S. Schulz
  • , D. Tanner
  • , C. Coughlan
  • , Miguel A. Caro

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

We overview the impact of random alloy fluctuations on the electronic properties of InAlN and InGaN systems. Both density functional theory and empirical atomistic approaches have been applied. We describe our empirical atomistic approach to describe the electronic structure of III-N alloys and quantum wells (QWs). We show that random alloy fluctuations lead to wave function localization effects in the electronic structure of InAlN and InGaN alloys and QWs.

Original languageEnglish
Title of host publication15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
EditorsYuh-Renn Wu, Joachim Piprek
PublisherIEEE Computer Society
Pages111-112
Number of pages2
ISBN (Electronic)9781479983797
DOIs
Publication statusPublished - 10 May 2015
Event15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 - Taipei, Taiwan, Province of China
Duration: 7 Sep 201511 Sep 2015

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Volume2015-May
ISSN (Print)2158-3234

Conference

Conference15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
Country/TerritoryTaiwan, Province of China
CityTaipei
Period7/09/1511/09/15

Keywords

  • atomistic models
  • carrier localization
  • InAlN
  • InGaN quantum wells

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