Improved beam quality due to current profiling in a broad area semiconductor laser

J. Houlihan; V. Voignier; J. R. O'Callaghan; G. Wu; G. Huyet; J. G. McInerney; B. Corbett

doi:10.1117/12.476265

Improved beam quality due to current profiling in a broad area semiconductor laser

J. Houlihan
, V. Voignier
, J. R. O'Callaghan
, G. Wu
, G. Huyet
, J. G. McInerney
, B. Corbett

Novalux Inc.

Research output: Contribution to journal › Article › peer-review

Abstract

A mechanism for obtaining stable travelling waves in the transverse section of a semiconductor laser is presented. This is illustrated with experimental and numerical results utilizing the technique of transverse current profiling. Thus, the underlying physics of current profiling could be extended to the case of transversely coupled lasers to engineer phase locked laser arrays.

Original language	English
Pages (from-to)	261-269
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4947
DOIs	https://doi.org/10.1117/12.476265
Publication status	Published - 2002
Event	Lasers, Diodes, Optoelectronic Devices, and Heterogenous Integration - Brugge, Belgium Duration: 29 Oct 2002 → 31 Oct 2002

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10.1117/12.476265

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title = "Improved beam quality due to current profiling in a broad area semiconductor laser",

abstract = "A mechanism for obtaining stable travelling waves in the transverse section of a semiconductor laser is presented. This is illustrated with experimental and numerical results utilizing the technique of transverse current profiling. Thus, the underlying physics of current profiling could be extended to the case of transversely coupled lasers to engineer phase locked laser arrays.",

author = "J. Houlihan and V. Voignier and O'Callaghan, \{J. R.\} and G. Wu and G. Huyet and McInerney, \{J. G.\} and B. Corbett",

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AU - Houlihan, J.

AU - Voignier, V.

AU - O'Callaghan, J. R.

AU - Wu, G.

AU - Huyet, G.

AU - McInerney, J. G.

AU - Corbett, B.

PY - 2002

Y1 - 2002

N2 - A mechanism for obtaining stable travelling waves in the transverse section of a semiconductor laser is presented. This is illustrated with experimental and numerical results utilizing the technique of transverse current profiling. Thus, the underlying physics of current profiling could be extended to the case of transversely coupled lasers to engineer phase locked laser arrays.

AB - A mechanism for obtaining stable travelling waves in the transverse section of a semiconductor laser is presented. This is illustrated with experimental and numerical results utilizing the technique of transverse current profiling. Thus, the underlying physics of current profiling could be extended to the case of transversely coupled lasers to engineer phase locked laser arrays.

UR - https://www.scopus.com/pages/publications/0037855988

U2 - 10.1117/12.476265

DO - 10.1117/12.476265

M3 - Article

AN - SCOPUS:0037855988

SN - 0277-786X

VL - 4947

SP - 261

EP - 269

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Lasers, Diodes, Optoelectronic Devices, and Heterogenous Integration

Y2 - 29 October 2002 through 31 October 2002

ER -

Improved beam quality due to current profiling in a broad area semiconductor laser

Abstract

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