@article{981aaac58ca141e58cb4fdb50accc224,
title = "Improved Capacitance-Voltage Characteristics of MOS Capacitors on GaAs Incorporating a PECVD Deposited Si3N4 Dielectric Layer",
keywords = "Capacitor, Plasma-enhanced chemical vapor deposition, Materials science, Capacitance, Optoelectronics, Dielectric, Layer (electronics), Voltage, Electronic engineering, Electrical engineering, Nanotechnology, Chemical vapor deposition, Engineering, Chemistry, Electrode, Physical chemistry",
author = "Paul Hurley",
year = "2011",
doi = "10.1149/ma2011-01/18/1229",
language = "English",
journal = "Meeting Abstracts",
issn = "1091-8213",
}