@inbook{734910a745b64c50b1956ed29112060d,
title = "Improved fin width scaling in fully-depleted FinFETs by source-drain implant optimization",
abstract = "Scaling the fin width in fully-depleted FinFETs can improve short channel effect control, but may be accompanied by a on-state drive current degradation. Ion implantation is a leading candidate as the means to introduce dopants into the silicon, but is often accompanied by amorphization when highly doped source-drain regions are formed. Thin-body silicon recrystallization after amorphization is not as straight-forward as bulk silicon. Crystalline integrity is worse as the fin width is scaled, thereby reducing dopant activation and increasing access resistance. In this work we demonstrate that non-amorphizing implant approaches can overcome drive degradation down to 10 nm wide fins in pMOS FinFETs.",
author = "R. Duffy and \{Van Dal\}, \{M. J.H.\} and Pawlak, \{B. J.\} and N. Collaert and L. Witters and R. Rooyackers and M. Kaiser and Weemaes, \{R. G.R.\} and M. Jurczak and Lander, \{R. J.P.\}",
year = "2008",
doi = "10.1109/ESSDERC.2008.4681766",
language = "English",
isbn = "9781424423644",
series = "ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "334--337",
booktitle = "ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference",
address = "United States",
note = "ESSDERC 2008 - 38th European Solid-State Device Research Conference ; Conference date: 15-09-2008 Through 19-09-2008",
}