Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films

C. Munasinghe; J. Heikenfeld; R. Dorey; R. Whatmore; J. Bender; J. Wager; A. J. Steckl

doi:10.1109/ISDRS.2003.1272001

Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films

C. Munasinghe
, J. Heikenfeld
, R. Dorey
, R. Whatmore
, J. Bender
, J. Wager
, A. J. Steckl

Tyndall Micronano Electronics

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Electroluminescent (EL) devices have traditionally utilized thin film dielectrics to provide the electrical isolation and high electric field across the phosphor layer. However, these so-called thin film electroluminescent (TFEL) devices require very stringent fabrication conditions and processes due to premature device breakdown caused by high field points in the thin insulating layers. The development of EL devices with thick dielectric layers (TDEL) has overcome this problem. However, initially the emission performance of TDEL devices was below that of TFEL devices. Recently, successful efforts have been made in the optimization of TDEL enhancing both luminance and power efficiency1. In this paper we report on the optimization of TDEL devices in both the phosphor material and the device structure. The TDEL device consists of a metal-insulator-semiconductor-insulator-metal (MISIM) stacked film structure built upon a transparent glass substrate (Fig. 1). The main phosphor materials used were ZnS:Mn and rare earth doped GaN. The ZnS:Mn, with a Mn concentration of 0.6 at.%, is deposited using magnetron sputtering whereas the GaN was grown in a solid source MBE system. Thin (100nm) strontium titanate (STO) films have been placed encapsulating the phosphor material. The STO films with high dielectric constant (εr-140) function as charge trapping dielectric layers in the TDEL device.

Original language	English
Title of host publication	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	75-76
Number of pages	2
ISBN (Electronic)	0780381394, 9780780381391
DOIs	https://doi.org/10.1109/ISDRS.2003.1272001
Publication status	Published - 2003
Event	International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States Duration: 10 Dec 2003 → 12 Dec 2003

Publication series

Name	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

Conference	International Semiconductor Device Research Symposium, ISDRS 2003
Country/Territory	United States
City	Washington
Period	10/12/03 → 12/12/03

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10.1109/ISDRS.2003.1272001

Cite this

Munasinghe, C., Heikenfeld, J., Dorey, R., Whatmore, R., Bender, J., Wager, J., & Steckl, A. J. (2003). Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 75-76). Article 1272001 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272001

Munasinghe, C. ; Heikenfeld, J. ; Dorey, R. et al. / Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 75-76 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

@inproceedings{be40875f3b8b44d58bb7df572f1836bb,

title = "Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films",

abstract = "Electroluminescent (EL) devices have traditionally utilized thin film dielectrics to provide the electrical isolation and high electric field across the phosphor layer. However, these so-called thin film electroluminescent (TFEL) devices require very stringent fabrication conditions and processes due to premature device breakdown caused by high field points in the thin insulating layers. The development of EL devices with thick dielectric layers (TDEL) has overcome this problem. However, initially the emission performance of TDEL devices was below that of TFEL devices. Recently, successful efforts have been made in the optimization of TDEL enhancing both luminance and power efficiency1. In this paper we report on the optimization of TDEL devices in both the phosphor material and the device structure. The TDEL device consists of a metal-insulator-semiconductor-insulator-metal (MISIM) stacked film structure built upon a transparent glass substrate (Fig. 1). The main phosphor materials used were ZnS:Mn and rare earth doped GaN. The ZnS:Mn, with a Mn concentration of 0.6 at.\%, is deposited using magnetron sputtering whereas the GaN was grown in a solid source MBE system. Thin (100nm) strontium titanate (STO) films have been placed encapsulating the phosphor material. The STO films with high dielectric constant (εr-140) function as charge trapping dielectric layers in the TDEL device.",

author = "C. Munasinghe and J. Heikenfeld and R. Dorey and R. Whatmore and J. Bender and J. Wager and Steckl, \{A. J.\}",

year = "2003",

doi = "10.1109/ISDRS.2003.1272001",

language = "English",

series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "75--76",

booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

address = "United States",

note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",

}

Munasinghe, C, Heikenfeld, J, Dorey, R, Whatmore, R, Bender, J, Wager, J & Steckl, AJ 2003, Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1272001, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 75-76, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 10/12/03. https://doi.org/10.1109/ISDRS.2003.1272001

Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films. / Munasinghe, C.; Heikenfeld, J.; Dorey, R. et al.
2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 75-76 1272001 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films

AU - Munasinghe, C.

AU - Heikenfeld, J.

AU - Dorey, R.

AU - Whatmore, R.

AU - Bender, J.

AU - Wager, J.

AU - Steckl, A. J.

PY - 2003

Y1 - 2003

N2 - Electroluminescent (EL) devices have traditionally utilized thin film dielectrics to provide the electrical isolation and high electric field across the phosphor layer. However, these so-called thin film electroluminescent (TFEL) devices require very stringent fabrication conditions and processes due to premature device breakdown caused by high field points in the thin insulating layers. The development of EL devices with thick dielectric layers (TDEL) has overcome this problem. However, initially the emission performance of TDEL devices was below that of TFEL devices. Recently, successful efforts have been made in the optimization of TDEL enhancing both luminance and power efficiency1. In this paper we report on the optimization of TDEL devices in both the phosphor material and the device structure. The TDEL device consists of a metal-insulator-semiconductor-insulator-metal (MISIM) stacked film structure built upon a transparent glass substrate (Fig. 1). The main phosphor materials used were ZnS:Mn and rare earth doped GaN. The ZnS:Mn, with a Mn concentration of 0.6 at.%, is deposited using magnetron sputtering whereas the GaN was grown in a solid source MBE system. Thin (100nm) strontium titanate (STO) films have been placed encapsulating the phosphor material. The STO films with high dielectric constant (εr-140) function as charge trapping dielectric layers in the TDEL device.

AB - Electroluminescent (EL) devices have traditionally utilized thin film dielectrics to provide the electrical isolation and high electric field across the phosphor layer. However, these so-called thin film electroluminescent (TFEL) devices require very stringent fabrication conditions and processes due to premature device breakdown caused by high field points in the thin insulating layers. The development of EL devices with thick dielectric layers (TDEL) has overcome this problem. However, initially the emission performance of TDEL devices was below that of TFEL devices. Recently, successful efforts have been made in the optimization of TDEL enhancing both luminance and power efficiency1. In this paper we report on the optimization of TDEL devices in both the phosphor material and the device structure. The TDEL device consists of a metal-insulator-semiconductor-insulator-metal (MISIM) stacked film structure built upon a transparent glass substrate (Fig. 1). The main phosphor materials used were ZnS:Mn and rare earth doped GaN. The ZnS:Mn, with a Mn concentration of 0.6 at.%, is deposited using magnetron sputtering whereas the GaN was grown in a solid source MBE system. Thin (100nm) strontium titanate (STO) films have been placed encapsulating the phosphor material. The STO films with high dielectric constant (εr-140) function as charge trapping dielectric layers in the TDEL device.

UR - https://www.scopus.com/pages/publications/84945308463

U2 - 10.1109/ISDRS.2003.1272001

DO - 10.1109/ISDRS.2003.1272001

M3 - Conference proceeding

AN - SCOPUS:84945308463

T3 - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

SP - 75

EP - 76

BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium, ISDRS 2003

Y2 - 10 December 2003 through 12 December 2003

ER -

Munasinghe C, Heikenfeld J, Dorey R, Whatmore R, Bender J, Wager J et al. Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 75-76. 1272001. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). doi: 10.1109/ISDRS.2003.1272001

Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films

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