Improved near- and far-field distributions in broad area semiconductor lasers with enhanced current spreading

P. A. O'Brien; P. M.W. Skovgaard; J. G. McInerney; J. S. Roberts

Improved near- and far-field distributions in broad area semiconductor lasers with enhanced current spreading

P. A. O'Brien
, P. M.W. Skovgaard
, J. G. McInerney
, J. S. Roberts

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

A novel semiconductor laser design with enhanced lateral current spreading is demonstrated. Tailoring of the injection current profile to eliminate sharp edges improves the far-fields, with narrower and symmetrical patterns when compared to a standard broad area laser. This is achieved by introducing a 10 μm p-GaAs layer during the growth of a standard GRINSCH structure. The device is called enhanced current spreading (ECS) laser. The far-field at a total output power of 0.6 W is single lobed, symmetric, and less than 60 percent narrower than the standard device.

Original language	English
Pages (from-to)	346-347
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
Publication status	Published - 1998
Event	Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA Duration: 1 Dec 1998 → 4 Dec 1998

Cite this

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title = "Improved near- and far-field distributions in broad area semiconductor lasers with enhanced current spreading",

abstract = "A novel semiconductor laser design with enhanced lateral current spreading is demonstrated. Tailoring of the injection current profile to eliminate sharp edges improves the far-fields, with narrower and symmetrical patterns when compared to a standard broad area laser. This is achieved by introducing a 10 μm p-GaAs layer during the growth of a standard GRINSCH structure. The device is called enhanced current spreading (ECS) laser. The far-field at a total output power of 0.6 W is single lobed, symmetric, and less than 60 percent narrower than the standard device.",

author = "O'Brien, \{P. A.\} and Skovgaard, \{P. M.W.\} and McInerney, \{J. G.\} and Roberts, \{J. S.\}",

year = "1998",

language = "English",

volume = "1",

pages = "346--347",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) ; Conference date: 01-12-1998 Through 04-12-1998",

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T1 - Improved near- and far-field distributions in broad area semiconductor lasers with enhanced current spreading

AU - O'Brien, P. A.

AU - Skovgaard, P. M.W.

AU - McInerney, J. G.

AU - Roberts, J. S.

PY - 1998

Y1 - 1998

N2 - A novel semiconductor laser design with enhanced lateral current spreading is demonstrated. Tailoring of the injection current profile to eliminate sharp edges improves the far-fields, with narrower and symmetrical patterns when compared to a standard broad area laser. This is achieved by introducing a 10 μm p-GaAs layer during the growth of a standard GRINSCH structure. The device is called enhanced current spreading (ECS) laser. The far-field at a total output power of 0.6 W is single lobed, symmetric, and less than 60 percent narrower than the standard device.

AB - A novel semiconductor laser design with enhanced lateral current spreading is demonstrated. Tailoring of the injection current profile to eliminate sharp edges improves the far-fields, with narrower and symmetrical patterns when compared to a standard broad area laser. This is achieved by introducing a 10 μm p-GaAs layer during the growth of a standard GRINSCH structure. The device is called enhanced current spreading (ECS) laser. The far-field at a total output power of 0.6 W is single lobed, symmetric, and less than 60 percent narrower than the standard device.

UR - https://www.scopus.com/pages/publications/0032300988

M3 - Article

AN - SCOPUS:0032300988

SN - 1092-8081

VL - 1

SP - 346

EP - 347

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2)

Y2 - 1 December 1998 through 4 December 1998

ER -

Improved near- and far-field distributions in broad area semiconductor lasers with enhanced current spreading

Abstract

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