@inproceedings{bdc79bc12d794fefb0c82ba6a01848ca,
title = "Improved reliability of Al 2O 3/InGaAs/InP MOS structures through in-situ forming gas annealing",
abstract = "In this paper we report on the leakage currents and time dependent dielectric breakdown characteristics of Al 2O 3/InGaAs/InP MOS structures where the Al 2O 3 dielectric is formed by atomic layer deposition (ALD) and the structures were annealed in-situ in the ALD reactor after Al 2O 3 growth. The effect of an in-situ forming gas (H 2/N 2) anneals and an in-situ H2/Ar plasma anneals was examined. The in-situ forming gas anneal was found to improve the time dependent dielectric breakdown characteristics without significant degradation of the gate stack capacitance. We also show that the H 2/Ar plasma treatment results in a marked reliability improvement but also causes a significant degradation of the gate stack capacitance which is confirmed by TEM to be a result on an increased physical thickness of the gate dielectric.",
keywords = "Al O, CMOS reliability, Forming Gas Anneal, InGaAs, stress induced leakage current, Time dependent dielectric breakdown",
author = "Robert O'Connor and Karim Cherkaoui and Roger Nagle and Michael Schmidt and Povey, \{Ian M.\} and Martyn Pemble and Hurley, \{Paul K.\}",
year = "2012",
doi = "10.1109/IRPS.2012.6241923",
language = "English",
isbn = "9781457716799",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "PI.1.1--PI.1.5",
booktitle = "2012 IEEE International Reliability Physics Symposium, IRPS 2012",
note = "2012 IEEE International Reliability Physics Symposium, IRPS 2012 ; Conference date: 15-04-2012 Through 19-04-2012",
}