Improved semiconductor-laser dynamics from induced population pulsation

Sebastian Wieczorek; Weng W. Chow; Lukas Chrostowski; Connie J. Chang-Hasnain

doi:10.1109/JQE.2006.874753

Improved semiconductor-laser dynamics from induced population pulsation

Sebastian Wieczorek
, Weng W. Chow
, Lukas Chrostowski
, Connie J. Chang-Hasnain

Research output: Contribution to journal › Article › peer-review

Abstract

This paper investigates theoretically the modification of dynamical properties in a semiconductor laser by a strong injected signal. It is found that enhanced relaxation oscillations are governed by the pulsations of the intracavity field and population at frequencies determined by the injected field and cavity resonances. Furthermore, the bandwidth enhancement is associated with the undamping of the injection-induced relaxation oscillation and strong population pulsation effects. There are two limitations to the modulation-bandwidth enhancement: Overdamping of relaxation oscillation and degradation of flat response at low frequencies. The injected-laser rate-equations used in the investigation reproduce the relevant aspects of modulation-bandwidth enhancement found in the experiment on injection-locked vertical-cavity surface-emitting lasers.

Original language	English
Pages (from-to)	552-562
Number of pages	11
Journal	IEEE Journal of Quantum Electronics
Volume	42
Issue number	6
DOIs	https://doi.org/10.1109/JQE.2006.874753
Publication status	Published - Jun 2006
Externally published	Yes

Keywords

Injection locking
Madulation response
Modulation bandwidth
Population pulsation
Relaxation oscillation
Semi-conductor laser

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10.1109/JQE.2006.874753

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title = "Improved semiconductor-laser dynamics from induced population pulsation",

abstract = "This paper investigates theoretically the modification of dynamical properties in a semiconductor laser by a strong injected signal. It is found that enhanced relaxation oscillations are governed by the pulsations of the intracavity field and population at frequencies determined by the injected field and cavity resonances. Furthermore, the bandwidth enhancement is associated with the undamping of the injection-induced relaxation oscillation and strong population pulsation effects. There are two limitations to the modulation-bandwidth enhancement: Overdamping of relaxation oscillation and degradation of flat response at low frequencies. The injected-laser rate-equations used in the investigation reproduce the relevant aspects of modulation-bandwidth enhancement found in the experiment on injection-locked vertical-cavity surface-emitting lasers.",

keywords = "Injection locking, Madulation response, Modulation bandwidth, Population pulsation, Relaxation oscillation, Semi-conductor laser",

author = "Sebastian Wieczorek and Chow, \{Weng W.\} and Lukas Chrostowski and Chang-Hasnain, \{Connie J.\}",

year = "2006",

month = jun,

doi = "10.1109/JQE.2006.874753",

language = "English",

volume = "42",

pages = "552--562",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Improved semiconductor-laser dynamics from induced population pulsation

AU - Wieczorek, Sebastian

AU - Chow, Weng W.

AU - Chrostowski, Lukas

AU - Chang-Hasnain, Connie J.

PY - 2006/6

Y1 - 2006/6

N2 - This paper investigates theoretically the modification of dynamical properties in a semiconductor laser by a strong injected signal. It is found that enhanced relaxation oscillations are governed by the pulsations of the intracavity field and population at frequencies determined by the injected field and cavity resonances. Furthermore, the bandwidth enhancement is associated with the undamping of the injection-induced relaxation oscillation and strong population pulsation effects. There are two limitations to the modulation-bandwidth enhancement: Overdamping of relaxation oscillation and degradation of flat response at low frequencies. The injected-laser rate-equations used in the investigation reproduce the relevant aspects of modulation-bandwidth enhancement found in the experiment on injection-locked vertical-cavity surface-emitting lasers.

AB - This paper investigates theoretically the modification of dynamical properties in a semiconductor laser by a strong injected signal. It is found that enhanced relaxation oscillations are governed by the pulsations of the intracavity field and population at frequencies determined by the injected field and cavity resonances. Furthermore, the bandwidth enhancement is associated with the undamping of the injection-induced relaxation oscillation and strong population pulsation effects. There are two limitations to the modulation-bandwidth enhancement: Overdamping of relaxation oscillation and degradation of flat response at low frequencies. The injected-laser rate-equations used in the investigation reproduce the relevant aspects of modulation-bandwidth enhancement found in the experiment on injection-locked vertical-cavity surface-emitting lasers.

KW - Injection locking

KW - Madulation response

KW - Modulation bandwidth

KW - Population pulsation

KW - Relaxation oscillation

KW - Semi-conductor laser

UR - https://www.scopus.com/pages/publications/33646872877

U2 - 10.1109/JQE.2006.874753

DO - 10.1109/JQE.2006.874753

M3 - Article

AN - SCOPUS:33646872877

SN - 0018-9197

VL - 42

SP - 552

EP - 562

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 6

ER -

Improved semiconductor-laser dynamics from induced population pulsation

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Keywords

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