@inbook{89976e432c874f6799eea8adcd7bba5c,
title = "Improvement in Electrical Properties of A1/La2O3/ZrO2/Gate Stack Deposited on LaON Passivated GaAs Substrate",
abstract = "The PEALD deposited La2O3/ZrO2 bilayer high-k on with and without LaON passivated GaAs substrates were investigated. The structural and electrical properties of bilayered MOS capacitors were studied in detailed. The dielectric constant (k) of =20.75, effective oxide charge (Qeff) of 1.094× 1012cm-2, interface trapped density (Dit)1.655× 1012eV-1cm-2 and leakage current density (J\}=8.93× 10-5\textbackslash{}at\textbackslash{}\textbackslash{}1V) were obtained for the LaON passivated GaAs MOS capacitor. The lowest capacitance equivalent thickness (CET) of 0.649 nm extracted from C-V curve for LaON passivated GaAs sample.",
keywords = "bilayer high-k, CET, interface trap density, LaON interfacial layer, PEALD",
author = "Barhate, \{Viral N.\} and Agrawal, \{Khushabu S.\} and Patil, \{Vilas S.\} and Mahajan, \{Ashok M.\}",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 ; Conference date: 06-04-2020 Through 21-04-2020",
year = "2020",
month = apr,
doi = "10.1109/EDTM47692.2020.9117895",
language = "English",
series = "4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings",
address = "United States",
}