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Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

  • Pavel Bolshakov
  • , Peng Zhao
  • , Angelica Azcatl
  • , Paul K. Hurley
  • , Robert M. Wallace
  • , Chadwin D. Young
  • University of Texas at Dallas

Research output: Contribution to journal › Article › peer-review

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