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Improving optical performance of AlGaN quantum wells

  • S. Wieczorek
  • , A. J. Fischer
  • , S. R. Lee
  • , A. A. Allerman
  • , M. H. Crawford
  • , W. W. Chow
  • Sandia National Laboratories, New Mexico

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

A way for mitigating internal electric field effects and improving optical performance of AlGaN quantum wells was analyzed. The model used was based on determining the quantum-well bandstructure through an iterative solution of k . p Hamiltonian and Poisson equation. The bandstructure results were used in a spontaneous emission calculation, where many-body Coulomb effects were included within the framework of the Padé approximation and quasiequilibrium condition was assumed. It was found that for low aluminium concentration, the heavy-hole band was the lowest hole band in the quantum well.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages23-24
Number of pages2
Volume1
Publication statusPublished - 2004
Externally publishedYes
Event2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico
Duration: 7 Nov 200411 Nov 2004

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISSN (Print)1092-8081

Conference

Conference2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004
Country/TerritoryPuerto Rico
CityRio Grande
Period7/11/0411/11/04

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