Abstract
In this paper, the on-wafer measurement of junction depletion capacitance is examined. This work provides an in-depth discussion of possible probing configurations which can be used. It outlines a method to consistently measure the junction capacitances accurately. The results from this method compare favorably with those extracted using S-parameter measurements. Additionally, methods are formulated to reduce the number of data points required for parameter extraction while at the same time maintaining a high model accuracy.
| Original language | English |
|---|---|
| Pages (from-to) | 207-214 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Semiconductor Manufacturing |
| Volume | 16 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - May 2003 |
Keywords
- Bipolar and BiCMOS processes
- Bipolar transistors
- Capacitance measurement
- Parameter estimation