In-situ characterization of Ga2O passivation of In 0.53Ga0.47As prior to high-k dielectric atomic layer deposition

M. Milojevic; R. Contreras-Guerrero; E. O'Connor; B. Brennan; P. K. Hurley; J. Kim; C. L. Hinkle; R. M. Wallace

doi:10.1063/1.3615666

In-situ characterization of Ga₂O passivation of In _0.53Ga_0.47As prior to high-k dielectric atomic layer deposition

M. Milojevic
, R. Contreras-Guerrero
, E. O'Connor
, B. Brennan
, P. K. Hurley
, J. Kim
, C. L. Hinkle
, R. M. Wallace

Research output: Contribution to journal › Article › peer-review

Abstract

Ga₂O interfacial passivation layers (IPLs) on In _0.53Ga_0.47As are investigated using in-situ monochromatic x-ray photoelectron spectroscopy. The oxide is entirely composed of Ga ₂O when deposited with an effusion cell temperature of 1500 °C and substrate temperature of 425 °C. The growth on In_0.53Ga _0.47As reveals slight chemical modification of the surface. The Ga₂O behavior and ability to protect the III-V surface are observed following Al₂O₃ deposition by atomic layer deposition following each precursor pulse. Al₂O₃ growth by trimethyl-Al (TMA) and water reveals that the IPL undergoes the "clean-up" effect following TMA exposures causing As-As bonding formation resulting in a high interface state density.

Original language	English
Article number	042904
Journal	Applied Physics Letters
Volume	99
Issue number	4
DOIs	https://doi.org/10.1063/1.3615666
Publication status	Published - 25 Jul 2011

Access to Document

10.1063/1.3615666

https://hdl.handle.net/10468/4316Licence: CC BY-NC-ND

Cite this

@article{2e102bb005eb4de9bf6aee7a1f6ce621,

title = "In-situ characterization of Ga2O passivation of In 0.53Ga0.47As prior to high-k dielectric atomic layer deposition",

abstract = "Ga2O interfacial passivation layers (IPLs) on In 0.53Ga0.47As are investigated using in-situ monochromatic x-ray photoelectron spectroscopy. The oxide is entirely composed of Ga 2O when deposited with an effusion cell temperature of 1500 °C and substrate temperature of 425 °C. The growth on In0.53Ga 0.47As reveals slight chemical modification of the surface. The Ga2O behavior and ability to protect the III-V surface are observed following Al2O3 deposition by atomic layer deposition following each precursor pulse. Al2O3 growth by trimethyl-Al (TMA) and water reveals that the IPL undergoes the {"}clean-up{"} effect following TMA exposures causing As-As bonding formation resulting in a high interface state density.",

author = "M. Milojevic and R. Contreras-Guerrero and E. O'Connor and B. Brennan and Hurley, \{P. K.\} and J. Kim and Hinkle, \{C. L.\} and Wallace, \{R. M.\}",

year = "2011",

month = jul,

day = "25",

doi = "10.1063/1.3615666",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - In-situ characterization of Ga2O passivation of In 0.53Ga0.47As prior to high-k dielectric atomic layer deposition

AU - Milojevic, M.

AU - Contreras-Guerrero, R.

AU - O'Connor, E.

AU - Brennan, B.

AU - Hurley, P. K.

AU - Kim, J.

AU - Hinkle, C. L.

AU - Wallace, R. M.

PY - 2011/7/25

Y1 - 2011/7/25

N2 - Ga2O interfacial passivation layers (IPLs) on In 0.53Ga0.47As are investigated using in-situ monochromatic x-ray photoelectron spectroscopy. The oxide is entirely composed of Ga 2O when deposited with an effusion cell temperature of 1500 °C and substrate temperature of 425 °C. The growth on In0.53Ga 0.47As reveals slight chemical modification of the surface. The Ga2O behavior and ability to protect the III-V surface are observed following Al2O3 deposition by atomic layer deposition following each precursor pulse. Al2O3 growth by trimethyl-Al (TMA) and water reveals that the IPL undergoes the "clean-up" effect following TMA exposures causing As-As bonding formation resulting in a high interface state density.

AB - Ga2O interfacial passivation layers (IPLs) on In 0.53Ga0.47As are investigated using in-situ monochromatic x-ray photoelectron spectroscopy. The oxide is entirely composed of Ga 2O when deposited with an effusion cell temperature of 1500 °C and substrate temperature of 425 °C. The growth on In0.53Ga 0.47As reveals slight chemical modification of the surface. The Ga2O behavior and ability to protect the III-V surface are observed following Al2O3 deposition by atomic layer deposition following each precursor pulse. Al2O3 growth by trimethyl-Al (TMA) and water reveals that the IPL undergoes the "clean-up" effect following TMA exposures causing As-As bonding formation resulting in a high interface state density.

UR - https://www.scopus.com/pages/publications/79961050388

U2 - 10.1063/1.3615666

DO - 10.1063/1.3615666

M3 - Article

AN - SCOPUS:79961050388

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042904

ER -

In-situ characterization of Ga₂O passivation of In _0.53Ga_0.47As prior to high-k dielectric atomic layer deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this