In-situ characterization of Ga2O passivation of In 0.53Ga0.47As prior to high-k dielectric atomic layer deposition
- M. Milojevic
- , R. Contreras-Guerrero
- , E. O'Connor
- , B. Brennan
- , P. K. Hurley
- , J. Kim
- , C. L. Hinkle
- , R. M. Wallace
- University of Texas at Dallas
Research output: Contribution to journal › Article › peer-review