In-situ FTIR studies of the growth of vanadium dioxide coatings on glass by atmospheric pressure chemical vapour deposition for VCl4 and H2O system

D. Vernardou; M. E. Pemble; D. W. Sheel

doi:10.1016/j.tsf.2007.03.081

In-situ FTIR studies of the growth of vanadium dioxide coatings on glass by atmospheric pressure chemical vapour deposition for VCl₄ and H₂O system

D. Vernardou
, M. E. Pemble
, D. W. Sheel

University College Cork

University of Salford

Research output: Contribution to journal › Article › peer-review

Abstract

This paper describes the use of in-situ FTIR to monitor the growth of VO₂ thin films on SiO₂-precoated glass from VCl₄ and H₂O under APCVD conditions. It is shown that the amount of H₂O introduced during the various reaction conditions can affect the intensity of HCl only in high excess. This observation is attributed to the operation of a possible surface reaction mechanism. The data presented here also suggest that the direct monitoring of the HCl bands might be an excellent process of providing a method of process control.

Original language	English
Pages (from-to)	8768-8770
Number of pages	3
Journal	Thin Solid Films
Volume	515
Issue number	24 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2007.03.081
Publication status	Published - 15 Oct 2007

Keywords

APCVD
FTIR
HCl in-situ monitoring
VCl
VO

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10.1016/j.tsf.2007.03.081

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title = "In-situ FTIR studies of the growth of vanadium dioxide coatings on glass by atmospheric pressure chemical vapour deposition for VCl4 and H2O system",

abstract = "This paper describes the use of in-situ FTIR to monitor the growth of VO2 thin films on SiO2-precoated glass from VCl4 and H2O under APCVD conditions. It is shown that the amount of H2O introduced during the various reaction conditions can affect the intensity of HCl only in high excess. This observation is attributed to the operation of a possible surface reaction mechanism. The data presented here also suggest that the direct monitoring of the HCl bands might be an excellent process of providing a method of process control.",

keywords = "APCVD, FTIR, HCl in-situ monitoring, VCl, VO",

author = "D. Vernardou and Pemble, \{M. E.\} and Sheel, \{D. W.\}",

year = "2007",

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doi = "10.1016/j.tsf.2007.03.081",

language = "English",

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T1 - In-situ FTIR studies of the growth of vanadium dioxide coatings on glass by atmospheric pressure chemical vapour deposition for VCl4 and H2O system

AU - Vernardou, D.

AU - Pemble, M. E.

AU - Sheel, D. W.

PY - 2007/10/15

Y1 - 2007/10/15

N2 - This paper describes the use of in-situ FTIR to monitor the growth of VO2 thin films on SiO2-precoated glass from VCl4 and H2O under APCVD conditions. It is shown that the amount of H2O introduced during the various reaction conditions can affect the intensity of HCl only in high excess. This observation is attributed to the operation of a possible surface reaction mechanism. The data presented here also suggest that the direct monitoring of the HCl bands might be an excellent process of providing a method of process control.

AB - This paper describes the use of in-situ FTIR to monitor the growth of VO2 thin films on SiO2-precoated glass from VCl4 and H2O under APCVD conditions. It is shown that the amount of H2O introduced during the various reaction conditions can affect the intensity of HCl only in high excess. This observation is attributed to the operation of a possible surface reaction mechanism. The data presented here also suggest that the direct monitoring of the HCl bands might be an excellent process of providing a method of process control.

KW - APCVD

KW - FTIR

KW - HCl in-situ monitoring

KW - VCl

KW - VO

UR - https://www.scopus.com/pages/publications/34648825283

U2 - 10.1016/j.tsf.2007.03.081

DO - 10.1016/j.tsf.2007.03.081

M3 - Article

AN - SCOPUS:34648825283

SN - 0040-6090

VL - 515

SP - 8768

EP - 8770

JO - Thin Solid Films

JF - Thin Solid Films

IS - 24 SPEC. ISS.

ER -

In-situ FTIR studies of the growth of vanadium dioxide coatings on glass by atmospheric pressure chemical vapour deposition for VCl₄ and H₂O system

Abstract

Keywords

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