In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

K. B. Ozanyan; P. J. Parbrook; M. Hopkinson; C. R. Whitehouse; Z. Sobiesierski; D. I. Westwood

doi:10.1063/1.365585

In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

K. B. Ozanyan
, P. J. Parbrook
, M. Hopkinson
, C. R. Whitehouse
, Z. Sobiesierski
, D. I. Westwood

Research output: Contribution to journal › Article › peer-review

Abstract

Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10^-7 and 3.5×10^-6 mbar and substrate temperature (T_s) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of T_s and phosphorus BEPs is proposed.

Original language	English
Pages (from-to)	474-476
Number of pages	3
Journal	Journal of Applied Physics
Volume	82
Issue number	1
DOIs	https://doi.org/10.1063/1.365585
Publication status	Published - 1 Jul 1997
Externally published	Yes

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title = "In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy",

abstract = "Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed.",

author = "Ozanyan, \{K. B.\} and Parbrook, \{P. J.\} and M. Hopkinson and Whitehouse, \{C. R.\} and Z. Sobiesierski and Westwood, \{D. I.\}",

year = "1997",

month = jul,

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doi = "10.1063/1.365585",

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volume = "82",

pages = "474--476",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

AU - Ozanyan, K. B.

AU - Parbrook, P. J.

AU - Hopkinson, M.

AU - Whitehouse, C. R.

AU - Sobiesierski, Z.

AU - Westwood, D. I.

PY - 1997/7/1

Y1 - 1997/7/1

N2 - Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed.

AB - Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed.

UR - https://www.scopus.com/pages/publications/0001663098

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DO - 10.1063/1.365585

M3 - Article

AN - SCOPUS:0001663098

SN - 0021-8979

VL - 82

SP - 474

EP - 476

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

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