In-situ probing of atomic layer deposition processes using infrared and near infrared spectroscopy

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Abstract

The monitoring of chemical vapour deposition, and its variant atomic layer deposition, by in-situ spectroscopic methods is well established and has been used to elucidate many important details of the dynamics, kinetics and mechanisms of these complex processes. Here we examine two in-situ gas phase probes that we have been employing, firstly, Fourier transform mid and nearinfrared spectroscopy to elucidate the nature of the gas phase products, and secondly, the use of near infrared tunable diode laser spectroscopy to spatially and temporally resolve the spectral features due to either reactants or products. Data is presented for the i) Al2O3 from Al(CH3)3 and H2O and; ii) HfO2 from Hf[N(C H3)2]4 and H2O growth systems.

Original languageEnglish
Title of host publicationECS Transactions - Atomic Layer Deposition Applications 4
PublisherElectrochemical Society Inc.
Pages349-354
Number of pages6
Edition4
ISBN (Print)9781566776509
DOIs
Publication statusPublished - 2009
EventAtomic Layer Deposition Applications 4 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 13 Oct 200815 Oct 2008

Publication series

NameECS Transactions
Number4
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceAtomic Layer Deposition Applications 4 - 214th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period13/10/0815/10/08

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