InAlAs solar cell on a GaAs substrate employing a graded In xGa1-xAs-InP metamorphic buffer layer

Ian Mathews; Donagh O'Mahony; Agnieszka Gocalinska; Marina Manganaro; Emanuele Pelucchi; Michael Schmidt; Alan P. Morrison; Brian Corbett

doi:10.1063/1.4789521

InAlAs solar cell on a GaAs substrate employing a graded In _xGa_1-xAs-InP metamorphic buffer layer

Ian Mathews
, Donagh O'Mahony
, Agnieszka Gocalinska
, Marina Manganaro
, Emanuele Pelucchi
, Michael Schmidt
, Alan P. Morrison
, Brian Corbett

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

Single junction In_0.52Al_0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 μm thick compositionally graded In_xGa_1-xAs/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 μm thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm², and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 × 10⁸ cm ^-2.

Original language	English
Article number	033906
Journal	Applied Physics Letters
Volume	102
Issue number	3
DOIs	https://doi.org/10.1063/1.4789521
Publication status	Published - 21 Jan 2013

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1063/1.4789521

Cite this

@article{124d107f9a7c49f488f9799351124b42,

title = "InAlAs solar cell on a GaAs substrate employing a graded In xGa1-xAs-InP metamorphic buffer layer",

abstract = "Single junction In0.52Al0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 μm thick compositionally graded InxGa1-xAs/InP metamorphic buffer layer to accommodate the 3.9\% mismatch. Cells processed from the 0.8 μm thick InAlAs layers had photovoltaic conversion efficiency of 5\% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm2, and a fill factor of 74.5\% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 × 108 cm -2.",

author = "Ian Mathews and Donagh O'Mahony and Agnieszka Gocalinska and Marina Manganaro and Emanuele Pelucchi and Michael Schmidt and Morrison, \{Alan P.\} and Brian Corbett",

year = "2013",

month = jan,

day = "21",

doi = "10.1063/1.4789521",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - InAlAs solar cell on a GaAs substrate employing a graded In xGa1-xAs-InP metamorphic buffer layer

AU - Mathews, Ian

AU - O'Mahony, Donagh

AU - Gocalinska, Agnieszka

AU - Manganaro, Marina

AU - Pelucchi, Emanuele

AU - Schmidt, Michael

AU - Morrison, Alan P.

AU - Corbett, Brian

PY - 2013/1/21

Y1 - 2013/1/21

N2 - Single junction In0.52Al0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 μm thick compositionally graded InxGa1-xAs/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 μm thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm2, and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 × 108 cm -2.

AB - Single junction In0.52Al0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 μm thick compositionally graded InxGa1-xAs/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 μm thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm2, and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 × 108 cm -2.

UR - https://www.scopus.com/pages/publications/84872974167

U2 - 10.1063/1.4789521

DO - 10.1063/1.4789521

M3 - Article

AN - SCOPUS:84872974167

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033906

ER -

InAlAs solar cell on a GaAs substrate employing a graded In _xGa_1-xAs-InP metamorphic buffer layer

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this