Inductively coupled plasma deep etching of InP/InGaAsP in Cl 2/CH4/H2 based chemistries with the electrode at 20 °c

Andreas Wieczorek; Vladimir Djara; Frank H. Peters; James O'Callaghan; Kevin Thomas; Brian Corbett

doi:10.1116/1.4748807

Inductively coupled plasma deep etching of InP/InGaAsP in Cl ₂/CH₄/H₂ based chemistries with the electrode at 20 °c

Andreas Wieczorek
, Vladimir Djara
, Frank H. Peters
, James O'Callaghan
, Kevin Thomas
, Brian Corbett

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

A Cl₂/CH₄/H₂ inductively coupled plasma process without additional heating or wafer bonding is developed for the InP/InGaAsP material system. Vertical and smooth sidewalls can be observed in the scanning electron microscope images. The main factors of etch rate, selectivity, and sidewall roughness are analyzed relative to the gas concentration in a full factorial design of the experimental procedure. Under optimized conditions, an etch depth of more than 3 μm with smooth and vertical sidewalls can be obtained. A strong indication of a passivation effect of CH₄ is obtained.

Original language	English
Article number	051208
Journal	Journal of Vacuum Science and Technology B
Volume	30
Issue number	5
DOIs	https://doi.org/10.1116/1.4748807
Publication status	Published - Sep 2012

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title = "Inductively coupled plasma deep etching of InP/InGaAsP in Cl 2/CH4/H2 based chemistries with the electrode at 20 °c",

abstract = "A Cl2/CH4/H2 inductively coupled plasma process without additional heating or wafer bonding is developed for the InP/InGaAsP material system. Vertical and smooth sidewalls can be observed in the scanning electron microscope images. The main factors of etch rate, selectivity, and sidewall roughness are analyzed relative to the gas concentration in a full factorial design of the experimental procedure. Under optimized conditions, an etch depth of more than 3 μm with smooth and vertical sidewalls can be obtained. A strong indication of a passivation effect of CH4 is obtained.",

author = "Andreas Wieczorek and Vladimir Djara and Peters, \{Frank H.\} and James O'Callaghan and Kevin Thomas and Brian Corbett",

year = "2012",

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T1 - Inductively coupled plasma deep etching of InP/InGaAsP in Cl 2/CH4/H2 based chemistries with the electrode at 20 °c

AU - Wieczorek, Andreas

AU - Djara, Vladimir

AU - Peters, Frank H.

AU - O'Callaghan, James

AU - Thomas, Kevin

AU - Corbett, Brian

PY - 2012/9

Y1 - 2012/9

N2 - A Cl2/CH4/H2 inductively coupled plasma process without additional heating or wafer bonding is developed for the InP/InGaAsP material system. Vertical and smooth sidewalls can be observed in the scanning electron microscope images. The main factors of etch rate, selectivity, and sidewall roughness are analyzed relative to the gas concentration in a full factorial design of the experimental procedure. Under optimized conditions, an etch depth of more than 3 μm with smooth and vertical sidewalls can be obtained. A strong indication of a passivation effect of CH4 is obtained.

AB - A Cl2/CH4/H2 inductively coupled plasma process without additional heating or wafer bonding is developed for the InP/InGaAsP material system. Vertical and smooth sidewalls can be observed in the scanning electron microscope images. The main factors of etch rate, selectivity, and sidewall roughness are analyzed relative to the gas concentration in a full factorial design of the experimental procedure. Under optimized conditions, an etch depth of more than 3 μm with smooth and vertical sidewalls can be obtained. A strong indication of a passivation effect of CH4 is obtained.

UR - https://www.scopus.com/pages/publications/84866524229

U2 - 10.1116/1.4748807

DO - 10.1116/1.4748807

M3 - Article

AN - SCOPUS:84866524229

SN - 2166-2746

VL - 30

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 5

M1 - 051208

ER -

Inductively coupled plasma deep etching of InP/InGaAsP in Cl ₂/CH₄/H₂ based chemistries with the electrode at 20 °c

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