Inductively coupled plasma deep etching of InP/InGaAsP in Cl2/CH4/H2 based chemistries with the electrode at 20 C

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Journal of Vacuum Science Technology B
Volume	30
Issue number	5
Publication status	Published - 2012

Cite this

@article{5e9307f6ff5b452ca73ed77679dfa4d1,

title = "Inductively coupled plasma deep etching of InP/InGaAsP in Cl2/CH4/H2 based chemistries with the electrode at 20 C",

author = "Andreas Wieczorek and Vladimir Djara and Peters, \{Frank H\} and James O{\textquoteright}Callaghan and Kevin Thomas and Brian Corbett",

year = "2012",

language = "English",

volume = "30",

journal = "Journal of Vacuum Science Technology B",

publisher = "AIP Publishing",

number = "5",

}

TY - JOUR

T1 - Inductively coupled plasma deep etching of InP/InGaAsP in Cl2/CH4/H2 based chemistries with the electrode at 20 C

AU - Wieczorek, Andreas

AU - Djara, Vladimir

AU - Peters, Frank H

AU - O’Callaghan, James

AU - Thomas, Kevin

AU - Corbett, Brian

PY - 2012

Y1 - 2012

M3 - Article

VL - 30

JO - Journal of Vacuum Science Technology B

JF - Journal of Vacuum Science Technology B

IS - 5

ER -