Inductively coupled plasma etching of GaN using SiCl4/Cl 2/Ar for submicron-sized features fabrication

R. Dylewicz; R. A. Hogg; P. W. Fry; P. J. Parbrook; R. Airey; A. Tahraoui; S. Patela

doi:10.1002/pssc.200674851

Inductively coupled plasma etching of GaN using SiCl₄/Cl ₂/Ar for submicron-sized features fabrication

R. Dylewicz
, R. A. Hogg
, P. W. Fry
, P. J. Parbrook
, R. Airey
, A. Tahraoui
, S. Patela

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper we report the optimization of the fabrication process of a grating coupler, which is fully integrated with a GaN planar waveguide. To our knowledge, this is the first report of a grating-assisted optical coupler in gallium nitride. ICP dry etching of n-doped GaN layers was investigated, where SiCl₄Cl₂/Ar gas mixture was used under different etching conditions. We report n-GaN ICP etching ratio of 520-2680 Å min ^-1 as well as etching selectivity of GaN over SiO₂ from 3 to 8, in the most cases. Grating ridge and grating groove width as well as the sidewalls slope were evaluated by SEM microscope.

Original language	English
Pages (from-to)	2634-2637
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200674851
Publication status	Published - 2007
Externally published	Yes
Event	International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 22 Oct 2006 → 27 Oct 2006

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10.1002/pssc.200674851

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title = "Inductively coupled plasma etching of GaN using SiCl4/Cl 2/Ar for submicron-sized features fabrication",

abstract = "In this paper we report the optimization of the fabrication process of a grating coupler, which is fully integrated with a GaN planar waveguide. To our knowledge, this is the first report of a grating-assisted optical coupler in gallium nitride. ICP dry etching of n-doped GaN layers was investigated, where SiCl4Cl2/Ar gas mixture was used under different etching conditions. We report n-GaN ICP etching ratio of 520-2680 {\AA} min -1 as well as etching selectivity of GaN over SiO2 from 3 to 8, in the most cases. Grating ridge and grating groove width as well as the sidewalls slope were evaluated by SEM microscope.",

author = "R. Dylewicz and Hogg, \{R. A.\} and Fry, \{P. W.\} and Parbrook, \{P. J.\} and R. Airey and A. Tahraoui and S. Patela",

year = "2007",

doi = "10.1002/pssc.200674851",

language = "English",

volume = "4",

pages = "2634--2637",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "International Workshop on Nitride Semiconductors, IWN 2006 ; Conference date: 22-10-2006 Through 27-10-2006",

}

TY - JOUR

T1 - Inductively coupled plasma etching of GaN using SiCl4/Cl 2/Ar for submicron-sized features fabrication

AU - Dylewicz, R.

AU - Hogg, R. A.

AU - Fry, P. W.

AU - Parbrook, P. J.

AU - Airey, R.

AU - Tahraoui, A.

AU - Patela, S.

PY - 2007

Y1 - 2007

N2 - In this paper we report the optimization of the fabrication process of a grating coupler, which is fully integrated with a GaN planar waveguide. To our knowledge, this is the first report of a grating-assisted optical coupler in gallium nitride. ICP dry etching of n-doped GaN layers was investigated, where SiCl4Cl2/Ar gas mixture was used under different etching conditions. We report n-GaN ICP etching ratio of 520-2680 Å min -1 as well as etching selectivity of GaN over SiO2 from 3 to 8, in the most cases. Grating ridge and grating groove width as well as the sidewalls slope were evaluated by SEM microscope.

AB - In this paper we report the optimization of the fabrication process of a grating coupler, which is fully integrated with a GaN planar waveguide. To our knowledge, this is the first report of a grating-assisted optical coupler in gallium nitride. ICP dry etching of n-doped GaN layers was investigated, where SiCl4Cl2/Ar gas mixture was used under different etching conditions. We report n-GaN ICP etching ratio of 520-2680 Å min -1 as well as etching selectivity of GaN over SiO2 from 3 to 8, in the most cases. Grating ridge and grating groove width as well as the sidewalls slope were evaluated by SEM microscope.

UR - https://www.scopus.com/pages/publications/49749103945

U2 - 10.1002/pssc.200674851

DO - 10.1002/pssc.200674851

M3 - Article

AN - SCOPUS:49749103945

SN - 1862-6351

VL - 4

SP - 2634

EP - 2637

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7

T2 - International Workshop on Nitride Semiconductors, IWN 2006

Y2 - 22 October 2006 through 27 October 2006

ER -

Inductively coupled plasma etching of GaN using SiCl₄/Cl ₂/Ar for submicron-sized features fabrication

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