Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties

V. N. Pavlovskii; E. V. Lutsenko; A. V. Danilchyk; V. Z. Zubialevich; A. V. Muravitskaya; G. P. Yablonskii; H. Kalisch; R. H. Jansen; B. Schineller; M. Heuken

doi:10.1109/CAOL.2010.5634186

Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties

V. N. Pavlovskii
, E. V. Lutsenko
, A. V. Danilchyk
, V. Z. Zubialevich
, A. V. Muravitskaya
, G. P. Yablonskii
, H. Kalisch
, R. H. Jansen
, B. Schineller
, M. Heuken

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Employing a strain-reducing layer stack between Si substrate and MQW layers as well as optimization of quantum well thicknesses of InGaN/GaN/Si MQW electroluminescent heterostructures led to disappearance of cracks and pinholes, to reduction of the laser threshold down to 75 kW/cm² at 433 nm under N2 laser emission excitation.

Original language	English
Title of host publication	Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010
Pages	265-267
Number of pages	3
DOIs	https://doi.org/10.1109/CAOL.2010.5634186
Publication status	Published - 2010
Externally published	Yes
Event	5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010 - Sevastopol, Crimea, Ukraine Duration: 10 Sep 2010 → 14 Sep 2010

Publication series

Name	Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010

Conference

Conference	5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010
Country/Territory	Ukraine
City	Sevastopol, Crimea
Period	10/09/10 → 14/09/10

Access to Document

10.1109/CAOL.2010.5634186

Cite this

Pavlovskii, V. N., Lutsenko, E. V., Danilchyk, A. V., Zubialevich, V. Z., Muravitskaya, A. V., Yablonskii, G. P., Kalisch, H., Jansen, R. H., Schineller, B., & Heuken, M. (2010). Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties. In Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010 (pp. 265-267). Article 5634186 (Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010). https://doi.org/10.1109/CAOL.2010.5634186

Pavlovskii, V. N. ; Lutsenko, E. V. ; Danilchyk, A. V. et al. / Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties. Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010. 2010. pp. 265-267 (Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010).

@inproceedings{e21ca510d2e64466976b9a317266a84e,

title = "Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties",

abstract = "Employing a strain-reducing layer stack between Si substrate and MQW layers as well as optimization of quantum well thicknesses of InGaN/GaN/Si MQW electroluminescent heterostructures led to disappearance of cracks and pinholes, to reduction of the laser threshold down to 75 kW/cm2 at 433 nm under N2 laser emission excitation.",

author = "Pavlovskii, \{V. N.\} and Lutsenko, \{E. V.\} and Danilchyk, \{A. V.\} and Zubialevich, \{V. Z.\} and Muravitskaya, \{A. V.\} and Yablonskii, \{G. P.\} and H. Kalisch and Jansen, \{R. H.\} and B. Schineller and M. Heuken",

year = "2010",

doi = "10.1109/CAOL.2010.5634186",

language = "English",

isbn = "9781424470464",

series = "Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010",

pages = "265--267",

booktitle = "Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010",

note = "5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010 ; Conference date: 10-09-2010 Through 14-09-2010",

}

Pavlovskii, VN, Lutsenko, EV, Danilchyk, AV, Zubialevich, VZ, Muravitskaya, AV, Yablonskii, GP, Kalisch, H, Jansen, RH, Schineller, B & Heuken, M 2010, Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties. in Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010., 5634186, Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010, pp. 265-267, 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010, Sevastopol, Crimea, Ukraine, 10/09/10. https://doi.org/10.1109/CAOL.2010.5634186

Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties. / Pavlovskii, V. N.; Lutsenko, E. V.; Danilchyk, A. V. et al.
Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010. 2010. p. 265-267 5634186 (Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties

AU - Pavlovskii, V. N.

AU - Lutsenko, E. V.

AU - Danilchyk, A. V.

AU - Zubialevich, V. Z.

AU - Muravitskaya, A. V.

AU - Yablonskii, G. P.

AU - Kalisch, H.

AU - Jansen, R. H.

AU - Schineller, B.

AU - Heuken, M.

PY - 2010

Y1 - 2010

N2 - Employing a strain-reducing layer stack between Si substrate and MQW layers as well as optimization of quantum well thicknesses of InGaN/GaN/Si MQW electroluminescent heterostructures led to disappearance of cracks and pinholes, to reduction of the laser threshold down to 75 kW/cm2 at 433 nm under N2 laser emission excitation.

AB - Employing a strain-reducing layer stack between Si substrate and MQW layers as well as optimization of quantum well thicknesses of InGaN/GaN/Si MQW electroluminescent heterostructures led to disappearance of cracks and pinholes, to reduction of the laser threshold down to 75 kW/cm2 at 433 nm under N2 laser emission excitation.

UR - https://www.scopus.com/pages/publications/78650367740

U2 - 10.1109/CAOL.2010.5634186

DO - 10.1109/CAOL.2010.5634186

M3 - Conference proceeding

AN - SCOPUS:78650367740

SN - 9781424470464

T3 - Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010

SP - 265

EP - 267

BT - Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010

T2 - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010

Y2 - 10 September 2010 through 14 September 2010

ER -

Pavlovskii VN, Lutsenko EV, Danilchyk AV, Zubialevich VZ, Muravitskaya AV, Yablonskii GP et al. Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties. In Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010. 2010. p. 265-267. 5634186. (Conference Proceedings - 5th International Conference on Advanced Optoelectronics and Lasers, CAOL' 2010). doi: 10.1109/CAOL.2010.5634186

Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties

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