Influence of N cluster states on band dispersion in GaInNAs quantum wells

S. B. Healy; A. Lindsay; E. P. O'Reilly

doi:10.1016/j.physe.2005.12.048

Influence of N cluster states on band dispersion in GaInNAs quantum wells

S. B. Healy
, A. Lindsay
, E. P. O'Reilly

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

We use a modified band-anticrossing (BAC) model to investigate the band dispersion in a GaN_x As_{1 - x} / AlGaAs quantum well (QW) as a function of hydrostatic pressure. The band edge mass increases considerably more quickly with pressure than in the case of a GaAs/AlGaAs QW, and the subband separation also decreases significantly. We predict that the strong anticrossing interaction between the GaAs host conduction band and isolated N levels will inhibit tunnelling through the QW for a range of energy above the isolated N levels. The energy of N resonant states depends strongly on details of the local environment, giving a broader calculated distribution of N states in GaInNAs compared to GaNAs.

Original language	English
Pages (from-to)	249-253
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	32
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physe.2005.12.048
Publication status	Published - May 2006
Externally published	Yes

Keywords

Alloy disorder
Band-anticrossing model
GaInNAs
Resonant tunnelling

Access to Document

10.1016/j.physe.2005.12.048

Cite this

@article{563b242b90d248abb8eae7df1a11bbc7,

title = "Influence of N cluster states on band dispersion in GaInNAs quantum wells",

abstract = "We use a modified band-anticrossing (BAC) model to investigate the band dispersion in a GaNx As1 - x / AlGaAs quantum well (QW) as a function of hydrostatic pressure. The band edge mass increases considerably more quickly with pressure than in the case of a GaAs/AlGaAs QW, and the subband separation also decreases significantly. We predict that the strong anticrossing interaction between the GaAs host conduction band and isolated N levels will inhibit tunnelling through the QW for a range of energy above the isolated N levels. The energy of N resonant states depends strongly on details of the local environment, giving a broader calculated distribution of N states in GaInNAs compared to GaNAs.",

keywords = "Alloy disorder, Band-anticrossing model, GaInNAs, Resonant tunnelling",

author = "Healy, \{S. B.\} and A. Lindsay and O'Reilly, \{E. P.\}",

year = "2006",

month = may,

doi = "10.1016/j.physe.2005.12.048",

language = "English",

volume = "32",

pages = "249--253",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-2 SPEC. ISS.",

}

TY - JOUR

T1 - Influence of N cluster states on band dispersion in GaInNAs quantum wells

AU - Healy, S. B.

AU - Lindsay, A.

AU - O'Reilly, E. P.

PY - 2006/5

Y1 - 2006/5

N2 - We use a modified band-anticrossing (BAC) model to investigate the band dispersion in a GaNx As1 - x / AlGaAs quantum well (QW) as a function of hydrostatic pressure. The band edge mass increases considerably more quickly with pressure than in the case of a GaAs/AlGaAs QW, and the subband separation also decreases significantly. We predict that the strong anticrossing interaction between the GaAs host conduction band and isolated N levels will inhibit tunnelling through the QW for a range of energy above the isolated N levels. The energy of N resonant states depends strongly on details of the local environment, giving a broader calculated distribution of N states in GaInNAs compared to GaNAs.

AB - We use a modified band-anticrossing (BAC) model to investigate the band dispersion in a GaNx As1 - x / AlGaAs quantum well (QW) as a function of hydrostatic pressure. The band edge mass increases considerably more quickly with pressure than in the case of a GaAs/AlGaAs QW, and the subband separation also decreases significantly. We predict that the strong anticrossing interaction between the GaAs host conduction band and isolated N levels will inhibit tunnelling through the QW for a range of energy above the isolated N levels. The energy of N resonant states depends strongly on details of the local environment, giving a broader calculated distribution of N states in GaInNAs compared to GaNAs.

KW - Alloy disorder

KW - Band-anticrossing model

KW - GaInNAs

KW - Resonant tunnelling

UR - https://www.scopus.com/pages/publications/33646193984

U2 - 10.1016/j.physe.2005.12.048

DO - 10.1016/j.physe.2005.12.048

M3 - Article

AN - SCOPUS:33646193984

SN - 1386-9477

VL - 32

SP - 249

EP - 253

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2 SPEC. ISS.

ER -

Influence of N cluster states on band dispersion in GaInNAs quantum wells

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this