Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

R. Duffy; V. C. Venezia; A. Heringa; B. J. Pawlak; M. J.P. Hopstaken; Y. Tamminga; T. Dao; F. Roozeboom; C. C. Wang; C. H. Diaz; P. B. Griffin

Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

R. Duffy
, V. C. Venezia
, A. Heringa
, B. J. Pawlak
, M. J.P. Hopstaken
, Y. Tamminga
, T. Dao
, F. Roozeboom
, C. C. Wang
, C. H. Diaz
, P. B. Griffin

Research output: Contribution to journal › Article › peer-review

Abstract

The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.

Original language	English
Pages (from-to)	865-868
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	3
Publication status	Published - May 2004
Externally published	Yes

Cite this

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title = "Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon",

abstract = "The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.",

author = "R. Duffy and Venezia, \{V. C.\} and A. Heringa and Pawlak, \{B. J.\} and Hopstaken, \{M. J.P.\} and Y. Tamminga and T. Dao and F. Roozeboom and Wang, \{C. C.\} and Diaz, \{C. H.\} and Griffin, \{P. B.\}",

year = "2004",

month = may,

language = "English",

volume = "22",

pages = "865--868",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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TY - JOUR

T1 - Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

AU - Duffy, R.

AU - Venezia, V. C.

AU - Heringa, A.

AU - Pawlak, B. J.

AU - Hopstaken, M. J.P.

AU - Tamminga, Y.

AU - Dao, T.

AU - Roozeboom, F.

AU - Wang, C. C.

AU - Diaz, C. H.

AU - Griffin, P. B.

PY - 2004/5

Y1 - 2004/5

N2 - The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.

AB - The influence of preamorphization and solid-phase epitaxial regrowth on indium doping profile was discussed. Premorphised silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. It is suggested that during recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. It was also suggested that the indium segregation phenomenon get enhanced at lower temperatures.

UR - https://www.scopus.com/pages/publications/3242716062

M3 - Article

AN - SCOPUS:3242716062

SN - 1071-1023

VL - 22

SP - 865

EP - 868

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon

Abstract

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