Influence of substrate on hafnium silicate metal-insulator-metal capacitors grown by atomic layer deposition

B. J. Hutchinson; V. S. Teodorescu; R. Negrea; B. Sheehan; P. Carolan; S. O'Brien; M. Modreanu; M. E. Pemble; I. M. Povey

doi:10.1149/06605.0269ecst

Influence of substrate on hafnium silicate metal-insulator-metal capacitors grown by atomic layer deposition

B. J. Hutchinson
, V. S. Teodorescu
, R. Negrea
, B. Sheehan
, P. Carolan
, S. O'Brien
, M. Modreanu
, M. E. Pemble
, I. M. Povey

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

In this paper we report on the structural and electrical properties of hafnium silicate films grown by atomic layer deposition on a platinum bottom electrode. The results are compared to previously published results from our laboratory for an aluminum bottom electrode structure, with otherwise identical processing of the dielectric layer. The results demonstrate that the bottom electrode has a marked effect on both the structure and electrical properties of the resulting MIM capacitor. The previously reported films on aluminum were found to exhibit excellent electrical properties over a range of substrate materials and were consistent with hafnium silicate. In this study high resolution transmission electron microscopy (HRTEM) analysis and Raman spectroscopy indicate that on platinum the main crystalline phase is monoclinic HfO₂ with a dielectric constant (κ) value of ∼18. Despite the crystalline nature of the HfO₂ no hysteresis was observed in the capacitance voltage measurements. The scanning transmission electron microscopy (STEM) analysis also reveals the presence of nanoparticles, located primarily towards the lower platinum metal electrode at the HfO₂ grain boundaries. Based on energy-dispersive x-ray spectroscopy (EDX) analysis the nanoparticles are consistent with silicon oxide inclusions.

Original language	English
Title of host publication	Advanced CMOS-Compatible Semiconductor Devices 17
Editors	Y. Omura, J. A. Martino, J. P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B. Y. Nguyen
Publisher	Electrochemical Society Inc.
Pages	269-275
Number of pages	7
Edition	5
ISBN (Electronic)	9781607685951
DOIs	https://doi.org/10.1149/06605.0269ecst
Publication status	Published - 2015
Event	Symposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting - Chicago, United States Duration: 24 May 2015 → 28 May 2015

Publication series

Name	ECS Transactions
Number	5
Volume	66
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting
Country/Territory	United States
City	Chicago
Period	24/05/15 → 28/05/15

Access to Document

10.1149/06605.0269ecst

Cite this

Hutchinson, B. J., Teodorescu, V. S., Negrea, R., Sheehan, B., Carolan, P., O'Brien, S., Modreanu, M., Pemble, M. E., & Povey, I. M. (2015). Influence of substrate on hafnium silicate metal-insulator-metal capacitors grown by atomic layer deposition. In Y. Omura, J. A. Martino, J. P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, & B. Y. Nguyen (Eds.), Advanced CMOS-Compatible Semiconductor Devices 17 (5 ed., pp. 269-275). (ECS Transactions; Vol. 66, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/06605.0269ecst

Hutchinson, B. J. ; Teodorescu, V. S. ; Negrea, R. et al. / Influence of substrate on hafnium silicate metal-insulator-metal capacitors grown by atomic layer deposition. Advanced CMOS-Compatible Semiconductor Devices 17. editor / Y. Omura ; J. A. Martino ; J. P. Raskin ; S. Selberherr ; H. Ishii ; F. Gamiz ; B. Y. Nguyen. 5. ed. Electrochemical Society Inc., 2015. pp. 269-275 (ECS Transactions; 5).

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title = "Influence of substrate on hafnium silicate metal-insulator-metal capacitors grown by atomic layer deposition",

abstract = "In this paper we report on the structural and electrical properties of hafnium silicate films grown by atomic layer deposition on a platinum bottom electrode. The results are compared to previously published results from our laboratory for an aluminum bottom electrode structure, with otherwise identical processing of the dielectric layer. The results demonstrate that the bottom electrode has a marked effect on both the structure and electrical properties of the resulting MIM capacitor. The previously reported films on aluminum were found to exhibit excellent electrical properties over a range of substrate materials and were consistent with hafnium silicate. In this study high resolution transmission electron microscopy (HRTEM) analysis and Raman spectroscopy indicate that on platinum the main crystalline phase is monoclinic HfO2 with a dielectric constant (κ) value of ∼18. Despite the crystalline nature of the HfO2 no hysteresis was observed in the capacitance voltage measurements. The scanning transmission electron microscopy (STEM) analysis also reveals the presence of nanoparticles, located primarily towards the lower platinum metal electrode at the HfO2 grain boundaries. Based on energy-dispersive x-ray spectroscopy (EDX) analysis the nanoparticles are consistent with silicon oxide inclusions.",

author = "Hutchinson, \{B. J.\} and Teodorescu, \{V. S.\} and R. Negrea and B. Sheehan and P. Carolan and S. O'Brien and M. Modreanu and Pemble, \{M. E.\} and Povey, \{I. M.\}",

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language = "English",

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Hutchinson, BJ, Teodorescu, VS, Negrea, R, Sheehan, B, Carolan, P, O'Brien, S , Modreanu, M, Pemble, ME & Povey, IM 2015, Influence of substrate on hafnium silicate metal-insulator-metal capacitors grown by atomic layer deposition. in Y Omura, JA Martino, JP Raskin, S Selberherr, H Ishii, F Gamiz & BY Nguyen (eds), Advanced CMOS-Compatible Semiconductor Devices 17. 5 edn, ECS Transactions, no. 5, vol. 66, Electrochemical Society Inc., pp. 269-275, Symposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting, Chicago, United States, 24/05/15. https://doi.org/10.1149/06605.0269ecst

Influence of substrate on hafnium silicate metal-insulator-metal capacitors grown by atomic layer deposition. / Hutchinson, B. J.; Teodorescu, V. S.; Negrea, R. et al.
Advanced CMOS-Compatible Semiconductor Devices 17. ed. / Y. Omura; J. A. Martino; J. P. Raskin; S. Selberherr; H. Ishii; F. Gamiz; B. Y. Nguyen. 5. ed. Electrochemical Society Inc., 2015. p. 269-275 (ECS Transactions; Vol. 66, No. 5).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Influence of substrate on hafnium silicate metal-insulator-metal capacitors grown by atomic layer deposition

AU - Hutchinson, B. J.

AU - Teodorescu, V. S.

AU - Negrea, R.

AU - Sheehan, B.

AU - Carolan, P.

AU - O'Brien, S.

AU - Modreanu, M.

AU - Pemble, M. E.

AU - Povey, I. M.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2015

Y1 - 2015

N2 - In this paper we report on the structural and electrical properties of hafnium silicate films grown by atomic layer deposition on a platinum bottom electrode. The results are compared to previously published results from our laboratory for an aluminum bottom electrode structure, with otherwise identical processing of the dielectric layer. The results demonstrate that the bottom electrode has a marked effect on both the structure and electrical properties of the resulting MIM capacitor. The previously reported films on aluminum were found to exhibit excellent electrical properties over a range of substrate materials and were consistent with hafnium silicate. In this study high resolution transmission electron microscopy (HRTEM) analysis and Raman spectroscopy indicate that on platinum the main crystalline phase is monoclinic HfO2 with a dielectric constant (κ) value of ∼18. Despite the crystalline nature of the HfO2 no hysteresis was observed in the capacitance voltage measurements. The scanning transmission electron microscopy (STEM) analysis also reveals the presence of nanoparticles, located primarily towards the lower platinum metal electrode at the HfO2 grain boundaries. Based on energy-dispersive x-ray spectroscopy (EDX) analysis the nanoparticles are consistent with silicon oxide inclusions.

AB - In this paper we report on the structural and electrical properties of hafnium silicate films grown by atomic layer deposition on a platinum bottom electrode. The results are compared to previously published results from our laboratory for an aluminum bottom electrode structure, with otherwise identical processing of the dielectric layer. The results demonstrate that the bottom electrode has a marked effect on both the structure and electrical properties of the resulting MIM capacitor. The previously reported films on aluminum were found to exhibit excellent electrical properties over a range of substrate materials and were consistent with hafnium silicate. In this study high resolution transmission electron microscopy (HRTEM) analysis and Raman spectroscopy indicate that on platinum the main crystalline phase is monoclinic HfO2 with a dielectric constant (κ) value of ∼18. Despite the crystalline nature of the HfO2 no hysteresis was observed in the capacitance voltage measurements. The scanning transmission electron microscopy (STEM) analysis also reveals the presence of nanoparticles, located primarily towards the lower platinum metal electrode at the HfO2 grain boundaries. Based on energy-dispersive x-ray spectroscopy (EDX) analysis the nanoparticles are consistent with silicon oxide inclusions.

UR - https://www.scopus.com/pages/publications/84931426657

U2 - 10.1149/06605.0269ecst

DO - 10.1149/06605.0269ecst

M3 - Chapter

AN - SCOPUS:84931426657

T3 - ECS Transactions

SP - 269

EP - 275

BT - Advanced CMOS-Compatible Semiconductor Devices 17

A2 - Omura, Y.

A2 - Martino, J. A.

A2 - Raskin, J. P.

A2 - Selberherr, S.

A2 - Ishii, H.

A2 - Gamiz, F.

A2 - Nguyen, B. Y.

PB - Electrochemical Society Inc.

T2 - Symposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting

Y2 - 24 May 2015 through 28 May 2015

ER -

Hutchinson BJ, Teodorescu VS, Negrea R, Sheehan B, Carolan P, O'Brien S et al. Influence of substrate on hafnium silicate metal-insulator-metal capacitors grown by atomic layer deposition. In Omura Y, Martino JA, Raskin JP, Selberherr S, Ishii H, Gamiz F, Nguyen BY, editors, Advanced CMOS-Compatible Semiconductor Devices 17. 5 ed. Electrochemical Society Inc. 2015. p. 269-275. (ECS Transactions; 5). doi: 10.1149/06605.0269ecst

Influence of substrate on hafnium silicate metal-insulator-metal capacitors grown by atomic layer deposition

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