Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

B. J. Pawlak; R. Duffy; T. Janssens; W. Vandervorst; K. Maex; A. J. Smith; N. E.B. Cowern; T. Dao; Y. Tamminga

doi:10.1063/1.1997276

Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

B. J. Pawlak
, R. Duffy
, T. Janssens
, W. Vandervorst
, K. Maex
, A. J. Smith
, N. E.B. Cowern
, T. Dao
, Y. Tamminga

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate the influence of the initial stage of the thermal treatment during solid-phase epitaxial regrowth (SPER) on the electrical activation level of arsenic in self-amorphized silicon, both with respect to heating ramp-up rates and the use of low-temperature preanneals. Enhancement of the electrically-active arsenic concentration by 14% is observed for activation with the fastest ramp-up rates (430 °Cs) compared to the slowest ones (36 °Cs). Around 50% of the 1015 at cm2, arsenic implant at 5 keV is found to be nonsubstitutional and this fraction reaches even 99% for dose 3× 1015 at cm2. Arsenic clustering in silicon amorphous phase during SPER is recognized to play an important role in the decrease of the active dose.

Original language	English
Article number	031915
Journal	Applied Physics Letters
Volume	87
Issue number	3
DOIs	https://doi.org/10.1063/1.1997276
Publication status	Published - 18 Jul 2005
Externally published	Yes

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10.1063/1.1997276

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title = "Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth",

abstract = "We investigate the influence of the initial stage of the thermal treatment during solid-phase epitaxial regrowth (SPER) on the electrical activation level of arsenic in self-amorphized silicon, both with respect to heating ramp-up rates and the use of low-temperature preanneals. Enhancement of the electrically-active arsenic concentration by 14\% is observed for activation with the fastest ramp-up rates (430 °Cs) compared to the slowest ones (36 °Cs). Around 50\% of the 1015 at cm2, arsenic implant at 5 keV is found to be nonsubstitutional and this fraction reaches even 99\% for dose 3× 1015 at cm2. Arsenic clustering in silicon amorphous phase during SPER is recognized to play an important role in the decrease of the active dose.",

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doi = "10.1063/1.1997276",

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T1 - Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

AU - Pawlak, B. J.

AU - Duffy, R.

AU - Janssens, T.

AU - Vandervorst, W.

AU - Maex, K.

AU - Smith, A. J.

AU - Cowern, N. E.B.

AU - Dao, T.

AU - Tamminga, Y.

PY - 2005/7/18

Y1 - 2005/7/18

N2 - We investigate the influence of the initial stage of the thermal treatment during solid-phase epitaxial regrowth (SPER) on the electrical activation level of arsenic in self-amorphized silicon, both with respect to heating ramp-up rates and the use of low-temperature preanneals. Enhancement of the electrically-active arsenic concentration by 14% is observed for activation with the fastest ramp-up rates (430 °Cs) compared to the slowest ones (36 °Cs). Around 50% of the 1015 at cm2, arsenic implant at 5 keV is found to be nonsubstitutional and this fraction reaches even 99% for dose 3× 1015 at cm2. Arsenic clustering in silicon amorphous phase during SPER is recognized to play an important role in the decrease of the active dose.

AB - We investigate the influence of the initial stage of the thermal treatment during solid-phase epitaxial regrowth (SPER) on the electrical activation level of arsenic in self-amorphized silicon, both with respect to heating ramp-up rates and the use of low-temperature preanneals. Enhancement of the electrically-active arsenic concentration by 14% is observed for activation with the fastest ramp-up rates (430 °Cs) compared to the slowest ones (36 °Cs). Around 50% of the 1015 at cm2, arsenic implant at 5 keV is found to be nonsubstitutional and this fraction reaches even 99% for dose 3× 1015 at cm2. Arsenic clustering in silicon amorphous phase during SPER is recognized to play an important role in the decrease of the active dose.

UR - https://www.scopus.com/pages/publications/24144440781

U2 - 10.1063/1.1997276

DO - 10.1063/1.1997276

M3 - Article

AN - SCOPUS:24144440781

SN - 0003-6951

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 031915

ER -

Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

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