Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates

S. Jiang; C. Merckling; A. Moussa; W. Guo; N. Waldron; M. Caymax; W. Vandervorst; M. Seefeldt; M. Heyns

doi:10.1149/06406.0501ecst

Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates

S. Jiang
, C. Merckling
, A. Moussa
, W. Guo
, N. Waldron
, M. Caymax
, W. Vandervorst
, M. Seefeldt
, M. Heyns

Research output: Contribution to journal › Article › peer-review

Abstract

The selective area growth (SAG) of InP by metal-organic vapor phase epitaxy (MOVPE) inside shallow trench isolation (STI) trenches of various widths ranging from nominally 20nm to 500nm on Si(001) substrates is investigated by SEM and AFM in this report. With different growth time, the similar morphology evolution stages in both wide and narrow trenches are identified. Nevertheless, by comparing 40nm wide trenches to 150nm ones, the coalescence stage of islands is delayed in narrow trenches, which leads to a discontinuous topology with sufficiently long time growth. We proposed a model to study the possible impact of trench width on the average inter-island distance, which can be a main mechanism for the evolution delay in narrow trenches.

Original language	English
Pages (from-to)	501-511
Number of pages	11
Journal	ECS Transactions
Volume	64
Issue number	6
DOIs	https://doi.org/10.1149/06406.0501ecst
Publication status	Published - 2014
Externally published	Yes
Event	6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 5 Oct 2014 → 9 Oct 2014

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title = "Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates",

abstract = "The selective area growth (SAG) of InP by metal-organic vapor phase epitaxy (MOVPE) inside shallow trench isolation (STI) trenches of various widths ranging from nominally 20nm to 500nm on Si(001) substrates is investigated by SEM and AFM in this report. With different growth time, the similar morphology evolution stages in both wide and narrow trenches are identified. Nevertheless, by comparing 40nm wide trenches to 150nm ones, the coalescence stage of islands is delayed in narrow trenches, which leads to a discontinuous topology with sufficiently long time growth. We proposed a model to study the possible impact of trench width on the average inter-island distance, which can be a main mechanism for the evolution delay in narrow trenches.",

author = "S. Jiang and C. Merckling and A. Moussa and W. Guo and N. Waldron and M. Caymax and W. Vandervorst and M. Seefeldt and M. Heyns",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting ; Conference date: 05-10-2014 Through 09-10-2014",

year = "2014",

doi = "10.1149/06406.0501ecst",

language = "English",

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T1 - Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates

AU - Jiang, S.

AU - Merckling, C.

AU - Moussa, A.

AU - Guo, W.

AU - Waldron, N.

AU - Caymax, M.

AU - Vandervorst, W.

AU - Seefeldt, M.

AU - Heyns, M.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2014

Y1 - 2014

N2 - The selective area growth (SAG) of InP by metal-organic vapor phase epitaxy (MOVPE) inside shallow trench isolation (STI) trenches of various widths ranging from nominally 20nm to 500nm on Si(001) substrates is investigated by SEM and AFM in this report. With different growth time, the similar morphology evolution stages in both wide and narrow trenches are identified. Nevertheless, by comparing 40nm wide trenches to 150nm ones, the coalescence stage of islands is delayed in narrow trenches, which leads to a discontinuous topology with sufficiently long time growth. We proposed a model to study the possible impact of trench width on the average inter-island distance, which can be a main mechanism for the evolution delay in narrow trenches.

AB - The selective area growth (SAG) of InP by metal-organic vapor phase epitaxy (MOVPE) inside shallow trench isolation (STI) trenches of various widths ranging from nominally 20nm to 500nm on Si(001) substrates is investigated by SEM and AFM in this report. With different growth time, the similar morphology evolution stages in both wide and narrow trenches are identified. Nevertheless, by comparing 40nm wide trenches to 150nm ones, the coalescence stage of islands is delayed in narrow trenches, which leads to a discontinuous topology with sufficiently long time growth. We proposed a model to study the possible impact of trench width on the average inter-island distance, which can be a main mechanism for the evolution delay in narrow trenches.

UR - https://www.scopus.com/pages/publications/84921315559

U2 - 10.1149/06406.0501ecst

DO - 10.1149/06406.0501ecst

M3 - Article

AN - SCOPUS:84921315559

SN - 1938-5862

VL - 64

SP - 501

EP - 511

JO - ECS Transactions

JF - ECS Transactions

IS - 6

T2 - 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting

Y2 - 5 October 2014 through 9 October 2014

ER -

Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates

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