Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates

  • S. Jiang
  • , C. Merckling
  • , A. Moussa
  • , W. Guo
  • , N. Waldron
  • , M. Caymax
  • , W. Vandervorst
  • , M. Seefeldt
  • , M. Heyns

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