InGaAs gate-all-around nanowire devices on 300mm Si substrates

Niamh Waldron; Clement Merckling; Lieve Teugels; Patrick Ong; Sheik Ansar Usman Ibrahim; Farid Sebaai; Ali Pourghaderi; Kathy Barla; Nadine Collaert; Aaron Voon Yew Thean

doi:10.1109/LED.2014.2359579

InGaAs gate-all-around nanowire devices on 300mm Si substrates

Niamh Waldron
, Clement Merckling
, Lieve Teugels
, Patrick Ong
, Sheik Ansar Usman Ibrahim
, Farid Sebaai
, Ali Pourghaderi
, Kathy Barla
, Nadine Collaert
, Aaron Voon Yew Thean

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated on 300mm Si substrates. For an L_G of 60 nm an extrinsic g_m of 1030μS/μ m at V_ds = 0.5 V is achieved which is a 1.75× increase compared with the replacement fin FinFet process. This improvement is attributed to the elimination of Mg counterdoping in the GAA flow. Ultrascaled nanowires with diameters of 6 nm were demonstrated to show immunity to D_it resulting in an SS_SAT of 66 mV/decade and negligible drain-induced barrier lowering for 85-nm L_G devices.

Original language	English
Article number	6914587
Pages (from-to)	1097-1099
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	11
DOIs	https://doi.org/10.1109/LED.2014.2359579
Publication status	Published - 1 Nov 2014
Externally published	Yes

Keywords

FinFet
gate-all-around
III-V
InGaAs
nanowire

Access to Document

10.1109/LED.2014.2359579

Cite this

@article{c8af2626d72242eb97de643508253cf5,

title = "InGaAs gate-all-around nanowire devices on 300mm Si substrates",

abstract = "In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated on 300mm Si substrates. For an LG of 60 nm an extrinsic gm of 1030μS/μ m at Vds = 0.5 V is achieved which is a 1.75× increase compared with the replacement fin FinFet process. This improvement is attributed to the elimination of Mg counterdoping in the GAA flow. Ultrascaled nanowires with diameters of 6 nm were demonstrated to show immunity to Dit resulting in an SSSAT of 66 mV/decade and negligible drain-induced barrier lowering for 85-nm LG devices.",

keywords = "FinFet, gate-all-around, III-V, InGaAs, nanowire",

author = "Niamh Waldron and Clement Merckling and Lieve Teugels and Patrick Ong and Ibrahim, \{Sheik Ansar Usman\} and Farid Sebaai and Ali Pourghaderi and Kathy Barla and Nadine Collaert and Thean, \{Aaron Voon Yew\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2014",

month = nov,

day = "1",

doi = "10.1109/LED.2014.2359579",

language = "English",

volume = "35",

pages = "1097--1099",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - InGaAs gate-all-around nanowire devices on 300mm Si substrates

AU - Waldron, Niamh

AU - Merckling, Clement

AU - Teugels, Lieve

AU - Ong, Patrick

AU - Ibrahim, Sheik Ansar Usman

AU - Sebaai, Farid

AU - Pourghaderi, Ali

AU - Barla, Kathy

AU - Collaert, Nadine

AU - Thean, Aaron Voon Yew

PY - 2014/11/1

Y1 - 2014/11/1

N2 - In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated on 300mm Si substrates. For an LG of 60 nm an extrinsic gm of 1030μS/μ m at Vds = 0.5 V is achieved which is a 1.75× increase compared with the replacement fin FinFet process. This improvement is attributed to the elimination of Mg counterdoping in the GAA flow. Ultrascaled nanowires with diameters of 6 nm were demonstrated to show immunity to Dit resulting in an SSSAT of 66 mV/decade and negligible drain-induced barrier lowering for 85-nm LG devices.

AB - In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated on 300mm Si substrates. For an LG of 60 nm an extrinsic gm of 1030μS/μ m at Vds = 0.5 V is achieved which is a 1.75× increase compared with the replacement fin FinFet process. This improvement is attributed to the elimination of Mg counterdoping in the GAA flow. Ultrascaled nanowires with diameters of 6 nm were demonstrated to show immunity to Dit resulting in an SSSAT of 66 mV/decade and negligible drain-induced barrier lowering for 85-nm LG devices.

KW - FinFet

KW - gate-all-around

KW - III-V

KW - InGaAs

KW - nanowire

UR - https://www.scopus.com/pages/publications/84908360100

U2 - 10.1109/LED.2014.2359579

DO - 10.1109/LED.2014.2359579

M3 - Article

AN - SCOPUS:84908360100

SN - 0741-3106

VL - 35

SP - 1097

EP - 1099

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 6914587

ER -

InGaAs gate-all-around nanowire devices on 300mm Si substrates

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this