InGaAs Surface Normal Photodiode for 2 μm Optical Communication Systems

Nan Ye; Hua Yang; Michael Gleeson; Nicola Pavarelli; Hongyu Zhang; James O'Callaghan; Wei Han; Noreen Nudds; Sean Collins; Agnieszka Gocalinska; Emanuele Pelucchi; Peter O'Brien; Fatima C.Garcia Gunning; Frank H. Peters; Brian Corbett

doi:10.1109/LPT.2015.2416346

InGaAs Surface Normal Photodiode for 2 μm Optical Communication Systems

Nan Ye
, Hua Yang
, Michael Gleeson
, Nicola Pavarelli
, Hongyu Zhang
, James O'Callaghan
, Wei Han
, Noreen Nudds
, Sean Collins
, Agnieszka Gocalinska
, Emanuele Pelucchi
, Peter O'Brien
, Fatima C.Garcia Gunning
, Frank H. Peters
, Brian Corbett

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

High bandwidth 2-μm wavelength surface normal p-i-n photodiodes using a high indium-content InGaAs strain-relaxed absorbing layer clad by p- and n-doped AlInGaAs layers are realized. A parabolic grading was used to relax the lattice constant from that of the InP substrate. We compare structures with different p-doping profiles and absorber thicknesses to achieve a 3-dB bandwidth of ∼10 GHz while maintaining a photoresponsivity of 0.93 A/W. A clear opening of the 10-Gb/s eye pattern was obtained with an input power of -3.07 dBm. By temperature-control of the mesa passivation process, the device leakage was reduced to 0.52 μA at -5 V bias.

Original language	English
Article number	7070709
Pages (from-to)	1469-1472
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	14
DOIs	https://doi.org/10.1109/LPT.2015.2416346
Publication status	Published - 15 Jul 2015

Keywords

2 μm
high speed photodiode
InGaAs

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10.1109/LPT.2015.2416346

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Ye, N., Yang, H., Gleeson, M., Pavarelli, N., Zhang, H., O'Callaghan, J., Han, W., Nudds, N., Collins, S., Gocalinska, A., Pelucchi, E., O'Brien, P., Gunning, F. C. G., Peters, F. H., & Corbett, B. (2015). InGaAs Surface Normal Photodiode for 2 μm Optical Communication Systems. IEEE Photonics Technology Letters, 27(14), 1469-1472. Article 7070709. https://doi.org/10.1109/LPT.2015.2416346

@article{b284fe54e4154a4db4dc51ba1e3c3afe,

title = "InGaAs Surface Normal Photodiode for 2 μm Optical Communication Systems",

abstract = "High bandwidth 2-μm wavelength surface normal p-i-n photodiodes using a high indium-content InGaAs strain-relaxed absorbing layer clad by p- and n-doped AlInGaAs layers are realized. A parabolic grading was used to relax the lattice constant from that of the InP substrate. We compare structures with different p-doping profiles and absorber thicknesses to achieve a 3-dB bandwidth of ∼10 GHz while maintaining a photoresponsivity of 0.93 A/W. A clear opening of the 10-Gb/s eye pattern was obtained with an input power of -3.07 dBm. By temperature-control of the mesa passivation process, the device leakage was reduced to 0.52 μA at -5 V bias.",

keywords = "2 μm, high speed photodiode, InGaAs",

author = "Nan Ye and Hua Yang and Michael Gleeson and Nicola Pavarelli and Hongyu Zhang and James O'Callaghan and Wei Han and Noreen Nudds and Sean Collins and Agnieszka Gocalinska and Emanuele Pelucchi and Peter O'Brien and Gunning, \{Fatima C.Garcia\} and Peters, \{Frank H.\} and Brian Corbett",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = jul,

day = "15",

doi = "10.1109/LPT.2015.2416346",

language = "English",

volume = "27",

pages = "1469--1472",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "14",

}

Ye, N, Yang, H, Gleeson, M, Pavarelli, N, Zhang, H, O'Callaghan, J, Han, W, Nudds, N , Collins, S, Gocalinska, A, Pelucchi, E , O'Brien, P , Gunning, FCG , Peters, FH & Corbett, B 2015, 'InGaAs Surface Normal Photodiode for 2 μm Optical Communication Systems', IEEE Photonics Technology Letters, vol. 27, no. 14, 7070709, pp. 1469-1472. https://doi.org/10.1109/LPT.2015.2416346

TY - JOUR

T1 - InGaAs Surface Normal Photodiode for 2 μm Optical Communication Systems

AU - Ye, Nan

AU - Yang, Hua

AU - Gleeson, Michael

AU - Pavarelli, Nicola

AU - Zhang, Hongyu

AU - O'Callaghan, James

AU - Han, Wei

AU - Nudds, Noreen

AU - Collins, Sean

AU - Gocalinska, Agnieszka

AU - Pelucchi, Emanuele

AU - O'Brien, Peter

AU - Gunning, Fatima C.Garcia

AU - Peters, Frank H.

AU - Corbett, Brian

PY - 2015/7/15

Y1 - 2015/7/15

N2 - High bandwidth 2-μm wavelength surface normal p-i-n photodiodes using a high indium-content InGaAs strain-relaxed absorbing layer clad by p- and n-doped AlInGaAs layers are realized. A parabolic grading was used to relax the lattice constant from that of the InP substrate. We compare structures with different p-doping profiles and absorber thicknesses to achieve a 3-dB bandwidth of ∼10 GHz while maintaining a photoresponsivity of 0.93 A/W. A clear opening of the 10-Gb/s eye pattern was obtained with an input power of -3.07 dBm. By temperature-control of the mesa passivation process, the device leakage was reduced to 0.52 μA at -5 V bias.

AB - High bandwidth 2-μm wavelength surface normal p-i-n photodiodes using a high indium-content InGaAs strain-relaxed absorbing layer clad by p- and n-doped AlInGaAs layers are realized. A parabolic grading was used to relax the lattice constant from that of the InP substrate. We compare structures with different p-doping profiles and absorber thicknesses to achieve a 3-dB bandwidth of ∼10 GHz while maintaining a photoresponsivity of 0.93 A/W. A clear opening of the 10-Gb/s eye pattern was obtained with an input power of -3.07 dBm. By temperature-control of the mesa passivation process, the device leakage was reduced to 0.52 μA at -5 V bias.

KW - 2 μm

KW - high speed photodiode

KW - InGaAs

UR - https://www.scopus.com/pages/publications/84934280011

U2 - 10.1109/LPT.2015.2416346

DO - 10.1109/LPT.2015.2416346

M3 - Article

AN - SCOPUS:84934280011

SN - 1041-1135

VL - 27

SP - 1469

EP - 1472

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 14

M1 - 7070709

ER -

InGaAs Surface Normal Photodiode for 2 μm Optical Communication Systems

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