InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80 - 450 K

Bernd Schineller; Harry Protzmann; Markus Luenenbuerger; G. Gerstenbrandt; Michael Heuken; Evgenii V. Lutsenko; Vitalii Z. Zubialevich; Vyacheslav N. Pavlovskii; Alexander L. Gurskii; Gennadii P. Yablonskii

InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80 - 450 K

Bernd Schineller
, Harry Protzmann
, Markus Luenenbuerger
, G. Gerstenbrandt
, Michael Heuken
, Evgenii V. Lutsenko
, Vitalii Z. Zubialevich
, Vyacheslav N. Pavlovskii
, Alexander L. Gurskii
, Gennadii P. Yablonskii

Research output: Contribution to journal › Article › peer-review

Abstract

Laser and optical properties of InGaN/GaN multiple quantum well heterostructures were investigated as functions of temperature (T = 80 - 450 K) and excitation intensity (I_exc = 10 - 1100 kW/cm²) of the N₂ laser radiation. Laser action was achieved in all types of the MQWs from the violet up to the blue spectral region (λ_las = 405 - 470 nm). The laser threshold at room temperature was 35 - 100 kW/cm² and 70 - 150 kW/cm² for the "violet" and "blue" lasers, correspondingly. The characteristics temperature in the temperature range of 80 - 220 K was T₀ - 180 K for the "violet" and T₀ - 530 K for the "blue" lasers. The T₀ was lower for all types of lasers at T>250 K. It was shown that the overheating of the active region under high excitation intensities can reach 40 - 100 K and it is due to inherent laser radiation.

Original language	English
Pages (from-to)	213-219
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5137
Publication status	Published - 2002
Externally published	Yes
Event	International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems - Moscow, Russian Federation Duration: 22 Jun 2002 → 27 Jun 2002

Keywords

GaN
Heterostructure
InGaN
Laser
Quantum well

Cite this

Schineller, B., Protzmann, H., Luenenbuerger, M., Gerstenbrandt, G., Heuken, M., Lutsenko, E. V., Zubialevich, V. Z., Pavlovskii, V. N., Gurskii, A. L., & Yablonskii, G. P. (2002). InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80 - 450 K. Proceedings of SPIE - The International Society for Optical Engineering, 5137, 213-219.

@article{3a1897d7d9564d9b92f65e9fb1d99fe0,

title = "InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80 - 450 K",

abstract = "Laser and optical properties of InGaN/GaN multiple quantum well heterostructures were investigated as functions of temperature (T = 80 - 450 K) and excitation intensity (Iexc = 10 - 1100 kW/cm2) of the N2 laser radiation. Laser action was achieved in all types of the MQWs from the violet up to the blue spectral region (λlas = 405 - 470 nm). The laser threshold at room temperature was 35 - 100 kW/cm2 and 70 - 150 kW/cm2 for the {"}violet{"} and {"}blue{"} lasers, correspondingly. The characteristics temperature in the temperature range of 80 - 220 K was T0 - 180 K for the {"}violet{"} and T0 - 530 K for the {"}blue{"} lasers. The T0 was lower for all types of lasers at T>250 K. It was shown that the overheating of the active region under high excitation intensities can reach 40 - 100 K and it is due to inherent laser radiation.",

keywords = "GaN, Heterostructure, InGaN, Laser, Quantum well",

author = "Bernd Schineller and Harry Protzmann and Markus Luenenbuerger and G. Gerstenbrandt and Michael Heuken and Lutsenko, \{Evgenii V.\} and Zubialevich, \{Vitalii Z.\} and Pavlovskii, \{Vyacheslav N.\} and Gurskii, \{Alexander L.\} and Yablonskii, \{Gennadii P.\}",

year = "2002",

language = "English",

volume = "5137",

pages = "213--219",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems ; Conference date: 22-06-2002 Through 27-06-2002",

}

TY - JOUR

T1 - InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80 - 450 K

AU - Schineller, Bernd

AU - Protzmann, Harry

AU - Luenenbuerger, Markus

AU - Gerstenbrandt, G.

AU - Heuken, Michael

AU - Lutsenko, Evgenii V.

AU - Zubialevich, Vitalii Z.

AU - Pavlovskii, Vyacheslav N.

AU - Gurskii, Alexander L.

AU - Yablonskii, Gennadii P.

PY - 2002

Y1 - 2002

N2 - Laser and optical properties of InGaN/GaN multiple quantum well heterostructures were investigated as functions of temperature (T = 80 - 450 K) and excitation intensity (Iexc = 10 - 1100 kW/cm2) of the N2 laser radiation. Laser action was achieved in all types of the MQWs from the violet up to the blue spectral region (λlas = 405 - 470 nm). The laser threshold at room temperature was 35 - 100 kW/cm2 and 70 - 150 kW/cm2 for the "violet" and "blue" lasers, correspondingly. The characteristics temperature in the temperature range of 80 - 220 K was T0 - 180 K for the "violet" and T0 - 530 K for the "blue" lasers. The T0 was lower for all types of lasers at T>250 K. It was shown that the overheating of the active region under high excitation intensities can reach 40 - 100 K and it is due to inherent laser radiation.

AB - Laser and optical properties of InGaN/GaN multiple quantum well heterostructures were investigated as functions of temperature (T = 80 - 450 K) and excitation intensity (Iexc = 10 - 1100 kW/cm2) of the N2 laser radiation. Laser action was achieved in all types of the MQWs from the violet up to the blue spectral region (λlas = 405 - 470 nm). The laser threshold at room temperature was 35 - 100 kW/cm2 and 70 - 150 kW/cm2 for the "violet" and "blue" lasers, correspondingly. The characteristics temperature in the temperature range of 80 - 220 K was T0 - 180 K for the "violet" and T0 - 530 K for the "blue" lasers. The T0 was lower for all types of lasers at T>250 K. It was shown that the overheating of the active region under high excitation intensities can reach 40 - 100 K and it is due to inherent laser radiation.

KW - GaN

KW - Heterostructure

KW - InGaN

KW - Laser

KW - Quantum well

UR - https://www.scopus.com/pages/publications/10744219660

M3 - Article

AN - SCOPUS:10744219660

SN - 0277-786X

VL - 5137

SP - 213

EP - 219

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - International Conference on Lasers, Applications, and Technologies 2002 Advanced Lasers and Systems

Y2 - 22 June 2002 through 27 June 2002

ER -

InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80 - 450 K

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Keywords

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