Inhomogeneous pumping of semiconductor lasers by contact profiling

P. M.W. Skovgaard; P. O'Brien; J. G. McInerney

Inhomogeneous pumping of semiconductor lasers by contact profiling

P. M.W. Skovgaard
, P. O'Brien
, J. G. McInerney

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

A simple yet versatile lithographic method was proposed to achieve arbitrary transverse and longitudinal density profiles of semiconductor lasers. To ensure that the current density is not modulated significantly in the longitudinal direction, a laser was cleaved perpendicular to the digits and the spontaneous emission was scanned through the side of the laser both below and above the lasing threshold. The near-fields from the two lasers were compared with a normal broad area laser for a range of pump currents under quasi-continuous wave operation. The conventional broad area laser showed typical multi-mode transverse dynamics, whereas both lasers with tailored current profiles showed much more stable near-fields.

Original language	English
Pages (from-to)	282-283
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
Publication status	Published - 1998
Event	Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA Duration: 1 Dec 1998 → 4 Dec 1998

Cite this

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title = "Inhomogeneous pumping of semiconductor lasers by contact profiling",

abstract = "A simple yet versatile lithographic method was proposed to achieve arbitrary transverse and longitudinal density profiles of semiconductor lasers. To ensure that the current density is not modulated significantly in the longitudinal direction, a laser was cleaved perpendicular to the digits and the spontaneous emission was scanned through the side of the laser both below and above the lasing threshold. The near-fields from the two lasers were compared with a normal broad area laser for a range of pump currents under quasi-continuous wave operation. The conventional broad area laser showed typical multi-mode transverse dynamics, whereas both lasers with tailored current profiles showed much more stable near-fields.",

author = "Skovgaard, \{P. M.W.\} and P. O'Brien and McInerney, \{J. G.\}",

year = "1998",

language = "English",

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journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) ; Conference date: 01-12-1998 Through 04-12-1998",

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T1 - Inhomogeneous pumping of semiconductor lasers by contact profiling

AU - Skovgaard, P. M.W.

AU - O'Brien, P.

AU - McInerney, J. G.

PY - 1998

Y1 - 1998

N2 - A simple yet versatile lithographic method was proposed to achieve arbitrary transverse and longitudinal density profiles of semiconductor lasers. To ensure that the current density is not modulated significantly in the longitudinal direction, a laser was cleaved perpendicular to the digits and the spontaneous emission was scanned through the side of the laser both below and above the lasing threshold. The near-fields from the two lasers were compared with a normal broad area laser for a range of pump currents under quasi-continuous wave operation. The conventional broad area laser showed typical multi-mode transverse dynamics, whereas both lasers with tailored current profiles showed much more stable near-fields.

AB - A simple yet versatile lithographic method was proposed to achieve arbitrary transverse and longitudinal density profiles of semiconductor lasers. To ensure that the current density is not modulated significantly in the longitudinal direction, a laser was cleaved perpendicular to the digits and the spontaneous emission was scanned through the side of the laser both below and above the lasing threshold. The near-fields from the two lasers were compared with a normal broad area laser for a range of pump currents under quasi-continuous wave operation. The conventional broad area laser showed typical multi-mode transverse dynamics, whereas both lasers with tailored current profiles showed much more stable near-fields.

UR - https://www.scopus.com/pages/publications/0032290674

M3 - Article

AN - SCOPUS:0032290674

SN - 1092-8081

VL - 1

SP - 282

EP - 283

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2)

Y2 - 1 December 1998 through 4 December 1998

ER -

Inhomogeneous pumping of semiconductor lasers by contact profiling

Abstract

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