TY - CHAP
T1 - Inp-AlInAs "strain free" early stages heteroepitaxy leading to nanostructure formation by MOVPE
AU - Gocalinska, Agnieszka
AU - Manganaro, Marina
AU - Juska, Gediminas
AU - Dimastrodonato, Valeria
AU - Thomas, Kevin
AU - Joyce, Bruce A.
AU - Zhang, Jing
AU - Vvedensky, Dimitri D.
AU - Pelucchi, Emanuele
PY - 2014
Y1 - 2014
N2 - We show that heteroepitaxy of thin films of InP on Al0.48In 0.52As by MOVPE does not result in continuous flat layer growth, but instead develops a number of low dimensional structures, e.g. quantum dots and rings. We consider local phase separation/alloying-induced strain and preferred aggregation of adatom species on the substrate surface together with reduced wettability of InP on AlInAs to be the cause of the observed surface organization. This behavior has not been previously reported, and it opens a new application window for creating strain-free type-II staggered QD structures for possible applications in optical memories, detectors, and solar cells.
AB - We show that heteroepitaxy of thin films of InP on Al0.48In 0.52As by MOVPE does not result in continuous flat layer growth, but instead develops a number of low dimensional structures, e.g. quantum dots and rings. We consider local phase separation/alloying-induced strain and preferred aggregation of adatom species on the substrate surface together with reduced wettability of InP on AlInAs to be the cause of the observed surface organization. This behavior has not been previously reported, and it opens a new application window for creating strain-free type-II staggered QD structures for possible applications in optical memories, detectors, and solar cells.
UR - https://www.scopus.com/pages/publications/84906739396
U2 - 10.1109/ICIPRM.2014.6880536
DO - 10.1109/ICIPRM.2014.6880536
M3 - Chapter
AN - SCOPUS:84906739396
SN - 9781479957293
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
BT - 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
Y2 - 11 May 2014 through 15 May 2014
ER -
