Inp-AlInAs "strain free" early stages heteroepitaxy leading to nanostructure formation by MOVPE

Agnieszka Gocalinska; Marina Manganaro; Gediminas Juska; Valeria Dimastrodonato; Kevin Thomas; Bruce A. Joyce; Jing Zhang; Dimitri D. Vvedensky; Emanuele Pelucchi

doi:10.1109/ICIPRM.2014.6880536

Inp-AlInAs "strain free" early stages heteroepitaxy leading to nanostructure formation by MOVPE

Agnieszka Gocalinska
, Marina Manganaro
, Gediminas Juska
, Valeria Dimastrodonato
, Kevin Thomas
, Bruce A. Joyce
, Jing Zhang
, Dimitri D. Vvedensky
, Emanuele Pelucchi

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We show that heteroepitaxy of thin films of InP on Al_0.48In _0.52As by MOVPE does not result in continuous flat layer growth, but instead develops a number of low dimensional structures, e.g. quantum dots and rings. We consider local phase separation/alloying-induced strain and preferred aggregation of adatom species on the substrate surface together with reduced wettability of InP on AlInAs to be the cause of the observed surface organization. This behavior has not been previously reported, and it opens a new application window for creating strain-free type-II staggered QD structures for possible applications in optical memories, detectors, and solar cells.

Original language	English
Title of host publication	26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479957293
DOIs	https://doi.org/10.1109/ICIPRM.2014.6880536
Publication status	Published - 2014
Event	26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 - Montpellier, France Duration: 11 May 2014 → 15 May 2014

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
Country/Territory	France
City	Montpellier
Period	11/05/14 → 15/05/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/ICIPRM.2014.6880536

Cite this

Gocalinska, A., Manganaro, M., Juska, G., Dimastrodonato, V., Thomas, K., Joyce, B. A., Zhang, J., Vvedensky, D. D., & Pelucchi, E. (2014). Inp-AlInAs "strain free" early stages heteroepitaxy leading to nanostructure formation by MOVPE. In 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 Article 6880536 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2014.6880536

Gocalinska, Agnieszka ; Manganaro, Marina ; Juska, Gediminas et al. / Inp-AlInAs "strain free" early stages heteroepitaxy leading to nanostructure formation by MOVPE. 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

@inproceedings{ad13973636164857a83db776407376f9,

title = "Inp-AlInAs {"}strain free{"} early stages heteroepitaxy leading to nanostructure formation by MOVPE",

abstract = "We show that heteroepitaxy of thin films of InP on Al0.48In 0.52As by MOVPE does not result in continuous flat layer growth, but instead develops a number of low dimensional structures, e.g. quantum dots and rings. We consider local phase separation/alloying-induced strain and preferred aggregation of adatom species on the substrate surface together with reduced wettability of InP on AlInAs to be the cause of the observed surface organization. This behavior has not been previously reported, and it opens a new application window for creating strain-free type-II staggered QD structures for possible applications in optical memories, detectors, and solar cells.",

author = "Agnieszka Gocalinska and Marina Manganaro and Gediminas Juska and Valeria Dimastrodonato and Kevin Thomas and Joyce, \{Bruce A.\} and Jing Zhang and Vvedensky, \{Dimitri D.\} and Emanuele Pelucchi",

year = "2014",

doi = "10.1109/ICIPRM.2014.6880536",

language = "English",

isbn = "9781479957293",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "26th International Conference on Indium Phosphide and Related Materials, IPRM 2014",

address = "United States",

note = "26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 ; Conference date: 11-05-2014 Through 15-05-2014",

}

Gocalinska, A, Manganaro, M, Juska, G, Dimastrodonato, V, Thomas, K, Joyce, BA, Zhang, J, Vvedensky, DD & Pelucchi, E 2014, Inp-AlInAs "strain free" early stages heteroepitaxy leading to nanostructure formation by MOVPE. in 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014., 6880536, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Institute of Electrical and Electronics Engineers Inc., 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Montpellier, France, 11/05/14. https://doi.org/10.1109/ICIPRM.2014.6880536

Inp-AlInAs "strain free" early stages heteroepitaxy leading to nanostructure formation by MOVPE. / Gocalinska, Agnieszka; Manganaro, Marina; Juska, Gediminas et al.
26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 6880536 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Inp-AlInAs "strain free" early stages heteroepitaxy leading to nanostructure formation by MOVPE

AU - Gocalinska, Agnieszka

AU - Manganaro, Marina

AU - Juska, Gediminas

AU - Dimastrodonato, Valeria

AU - Thomas, Kevin

AU - Joyce, Bruce A.

AU - Zhang, Jing

AU - Vvedensky, Dimitri D.

AU - Pelucchi, Emanuele

PY - 2014

Y1 - 2014

N2 - We show that heteroepitaxy of thin films of InP on Al0.48In 0.52As by MOVPE does not result in continuous flat layer growth, but instead develops a number of low dimensional structures, e.g. quantum dots and rings. We consider local phase separation/alloying-induced strain and preferred aggregation of adatom species on the substrate surface together with reduced wettability of InP on AlInAs to be the cause of the observed surface organization. This behavior has not been previously reported, and it opens a new application window for creating strain-free type-II staggered QD structures for possible applications in optical memories, detectors, and solar cells.

AB - We show that heteroepitaxy of thin films of InP on Al0.48In 0.52As by MOVPE does not result in continuous flat layer growth, but instead develops a number of low dimensional structures, e.g. quantum dots and rings. We consider local phase separation/alloying-induced strain and preferred aggregation of adatom species on the substrate surface together with reduced wettability of InP on AlInAs to be the cause of the observed surface organization. This behavior has not been previously reported, and it opens a new application window for creating strain-free type-II staggered QD structures for possible applications in optical memories, detectors, and solar cells.

UR - https://www.scopus.com/pages/publications/84906739396

U2 - 10.1109/ICIPRM.2014.6880536

DO - 10.1109/ICIPRM.2014.6880536

M3 - Conference proceeding

AN - SCOPUS:84906739396

SN - 9781479957293

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

BT - 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014

Y2 - 11 May 2014 through 15 May 2014

ER -

Gocalinska A, Manganaro M, Juska G, Dimastrodonato V, Thomas K, Joyce BA et al. Inp-AlInAs "strain free" early stages heteroepitaxy leading to nanostructure formation by MOVPE. In 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 6880536. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2014.6880536

Inp-AlInAs "strain free" early stages heteroepitaxy leading to nanostructure formation by MOVPE

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