INSAP: In Situ Surface Adduct Passivation as a New Route to the Protection and Functionalization of III-V Surfaces Following MOCVD Growth

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Original language	English
Pages (from-to)	190-192
Number of pages	3
Journal	Chemical Vapor Deposition
Volume	4
Issue number	5
DOIs	https://doi.org/10.1002/(SICI)1521-3862(199810)04:05<190::AID-CVDE190>3.0.CO;2-U
Publication status	Published - 1998

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@article{43e0baa512604ceb96c42e82e531211d,

title = "INSAP: In Situ Surface Adduct Passivation as a New Route to the Protection and Functionalization of III-V Surfaces Following MOCVD Growth",

author = "Pemble, \{Martyn E.\} and Yates, \{Heather M.\} and Yates, \{Rebecca F.\}",

year = "1998",

doi = "10.1002/(SICI)1521-3862(199810)04:05<190::AID-CVDE190>3.0.CO;2-U",

language = "English",

volume = "4",

pages = "190--192",

journal = "Chemical Vapor Deposition",

issn = "0948-1907",

publisher = "Wiley-VCH Verlag",

number = "5",

}

TY - JOUR

T1 - INSAP

T2 - In Situ Surface Adduct Passivation as a New Route to the Protection and Functionalization of III-V Surfaces Following MOCVD Growth

AU - Pemble, Martyn E.

AU - Yates, Heather M.

AU - Yates, Rebecca F.

PY - 1998

Y1 - 1998

UR - https://www.scopus.com/pages/publications/0346966129

U2 - 10.1002/(SICI)1521-3862(199810)04:05<190::AID-CVDE190>3.0.CO;2-U

DO - 10.1002/(SICI)1521-3862(199810)04:05<190::AID-CVDE190>3.0.CO;2-U

M3 - Article

AN - SCOPUS:0346966129

SN - 0948-1907

VL - 4

SP - 190

EP - 192

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

IS - 5

ER -