InxAl1–xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter

Vitaly Z. Zubialevich; Mikalai V. Rzheutski; Haoning Li; Thomas C. Sadler; Shahab N. Alam; Vipul Bhardwaj; Evgenii V. Lutsenko; Gennadii P. Yablonskii; Peter J. Parbrook

doi:10.1016/j.jlumin.2017.09.053

In_xAl_1–xN/Al_0.53Ga_0.47N multiple quantum wells on Al_0.5Ga_0.5N buffer with variable in-plane lattice parameter

Vitaly Z. Zubialevich
, Mikalai V. Rzheutski
, Haoning Li
, Thomas C. Sadler
, Shahab N. Alam
, Vipul Bhardwaj
, Evgenii V. Lutsenko
, Gennadii P. Yablonskii
, Peter J. Parbrook

Belarus Academy of Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

The structural and luminescent properties of In_xAl_1–xN/Al_0.53Ga_0.47N multiple quantum wells (MQW) grown on an Al_0.5Ga_0.5N buffer partially relaxed with respect to an underlying AlN-template are reported. A significant redshift and improvement of ultraviolet (UV) photoluminescence (PL) intensity is found for InAlN MQWs grown on AlGaN buffers with higher relaxation degree. This is attributed to a higher QW indium incorporation as confirmed also by X-ray diffraction (XRD). The nature of room temperature time resolved PL is studied and discussed from the point of view of the possibility of a type I–type II band lineup transition in the InAlN–AlGaN system.

Original language	English
Pages (from-to)	797-802
Number of pages	6
Journal	Journal of Luminescence
Volume	194
DOIs	https://doi.org/10.1016/j.jlumin.2017.09.053
Publication status	Published - Feb 2018

Keywords

InAlN
Photoluminescence
Strain relaxation
Type II band lineup

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10.1016/j.jlumin.2017.09.053

https://hdl.handle.net/10468/5975Licence: CC BY-NC-ND

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@article{805c5a113e574a66911900fb9307cd97,

title = "InxAl1–xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter",

abstract = "The structural and luminescent properties of InxAl1–xN/Al0.53Ga0.47N multiple quantum wells (MQW) grown on an Al0.5Ga0.5N buffer partially relaxed with respect to an underlying AlN-template are reported. A significant redshift and improvement of ultraviolet (UV) photoluminescence (PL) intensity is found for InAlN MQWs grown on AlGaN buffers with higher relaxation degree. This is attributed to a higher QW indium incorporation as confirmed also by X-ray diffraction (XRD). The nature of room temperature time resolved PL is studied and discussed from the point of view of the possibility of a type I–type II band lineup transition in the InAlN–AlGaN system.",

keywords = "InAlN, Photoluminescence, Strain relaxation, Type II band lineup",

author = "Zubialevich, \{Vitaly Z.\} and Rzheutski, \{Mikalai V.\} and Haoning Li and Sadler, \{Thomas C.\} and Alam, \{Shahab N.\} and Vipul Bhardwaj and Lutsenko, \{Evgenii V.\} and Yablonskii, \{Gennadii P.\} and Parbrook, \{Peter J.\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

month = feb,

doi = "10.1016/j.jlumin.2017.09.053",

language = "English",

volume = "194",

pages = "797--802",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - InxAl1–xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter

AU - Zubialevich, Vitaly Z.

AU - Rzheutski, Mikalai V.

AU - Li, Haoning

AU - Sadler, Thomas C.

AU - Alam, Shahab N.

AU - Bhardwaj, Vipul

AU - Lutsenko, Evgenii V.

AU - Yablonskii, Gennadii P.

AU - Parbrook, Peter J.

PY - 2018/2

Y1 - 2018/2

N2 - The structural and luminescent properties of InxAl1–xN/Al0.53Ga0.47N multiple quantum wells (MQW) grown on an Al0.5Ga0.5N buffer partially relaxed with respect to an underlying AlN-template are reported. A significant redshift and improvement of ultraviolet (UV) photoluminescence (PL) intensity is found for InAlN MQWs grown on AlGaN buffers with higher relaxation degree. This is attributed to a higher QW indium incorporation as confirmed also by X-ray diffraction (XRD). The nature of room temperature time resolved PL is studied and discussed from the point of view of the possibility of a type I–type II band lineup transition in the InAlN–AlGaN system.

AB - The structural and luminescent properties of InxAl1–xN/Al0.53Ga0.47N multiple quantum wells (MQW) grown on an Al0.5Ga0.5N buffer partially relaxed with respect to an underlying AlN-template are reported. A significant redshift and improvement of ultraviolet (UV) photoluminescence (PL) intensity is found for InAlN MQWs grown on AlGaN buffers with higher relaxation degree. This is attributed to a higher QW indium incorporation as confirmed also by X-ray diffraction (XRD). The nature of room temperature time resolved PL is studied and discussed from the point of view of the possibility of a type I–type II band lineup transition in the InAlN–AlGaN system.

KW - InAlN

KW - Photoluminescence

KW - Strain relaxation

KW - Type II band lineup

UR - https://www.scopus.com/pages/publications/85030474990

U2 - 10.1016/j.jlumin.2017.09.053

DO - 10.1016/j.jlumin.2017.09.053

M3 - Article

AN - SCOPUS:85030474990

SN - 0022-2313

VL - 194

SP - 797

EP - 802

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

In_xAl_1–xN/Al_0.53Ga_0.47N multiple quantum wells on Al_0.5Ga_0.5N buffer with variable in-plane lattice parameter

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Keywords

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