Integrable InGaAs/GaAs vertical-cavity surface-emitting lasers

B. J. Thibeault; J. W. Scott; M. G. Peters; F. H. Peters; D. B. Young; L. A. Coldren

doi:10.1049/el:19931476

Integrable InGaAs/GaAs vertical-cavity surface-emitting lasers

B. J. Thibeault
, J. W. Scott
, M. G. Peters
, F. H. Peters
, D. B. Young
, L. A. Coldren

University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

Abstract

A new electrically isolated bottom-emission vertical-cavity surface-emitting laser structure with a novel contacting method is demonstrated. The structure is grown on semi-insulating material and contacts are made to an n-type intracavity contact layer and the top of a low-resistance Al_0.67Ga_0.33As/GaAs p-type distributed Bragg reflector. This structure offers the advantages of device isolation and low parasitic capacitance without sacrificing performance. Small devices (10µm or less in diameter) perform as well as the best lasers reported in the literature.

Original language	English
Pages (from-to)	2197-2199
Number of pages	3
Journal	Electronics Letters
Volume	29
Issue number	25
DOIs	https://doi.org/10.1049/el:19931476
Publication status	Published - Dec 1993
Externally published	Yes

Keywords

lasers
Vertical cavity surface emitting lasers

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10.1049/el:19931476

Cite this

@article{b4309dce9b8441eeb74fcf3aeba65b98,

title = "Integrable InGaAs/GaAs vertical-cavity surface-emitting lasers",

abstract = "A new electrically isolated bottom-emission vertical-cavity surface-emitting laser structure with a novel contacting method is demonstrated. The structure is grown on semi-insulating material and contacts are made to an n-type intracavity contact layer and the top of a low-resistance Al0.67Ga0.33As/GaAs p-type distributed Bragg reflector. This structure offers the advantages of device isolation and low parasitic capacitance without sacrificing performance. Small devices (10µm or less in diameter) perform as well as the best lasers reported in the literature.",

keywords = "lasers, Vertical cavity surface emitting lasers",

author = "Thibeault, \{B. J.\} and Scott, \{J. W.\} and Peters, \{M. G.\} and Peters, \{F. H.\} and Young, \{D. B.\} and Coldren, \{L. A.\}",

year = "1993",

month = dec,

doi = "10.1049/el:19931476",

language = "English",

volume = "29",

pages = "2197--2199",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "25",

}

TY - JOUR

T1 - Integrable InGaAs/GaAs vertical-cavity surface-emitting lasers

AU - Thibeault, B. J.

AU - Scott, J. W.

AU - Peters, M. G.

AU - Peters, F. H.

AU - Young, D. B.

AU - Coldren, L. A.

PY - 1993/12

Y1 - 1993/12

N2 - A new electrically isolated bottom-emission vertical-cavity surface-emitting laser structure with a novel contacting method is demonstrated. The structure is grown on semi-insulating material and contacts are made to an n-type intracavity contact layer and the top of a low-resistance Al0.67Ga0.33As/GaAs p-type distributed Bragg reflector. This structure offers the advantages of device isolation and low parasitic capacitance without sacrificing performance. Small devices (10µm or less in diameter) perform as well as the best lasers reported in the literature.

AB - A new electrically isolated bottom-emission vertical-cavity surface-emitting laser structure with a novel contacting method is demonstrated. The structure is grown on semi-insulating material and contacts are made to an n-type intracavity contact layer and the top of a low-resistance Al0.67Ga0.33As/GaAs p-type distributed Bragg reflector. This structure offers the advantages of device isolation and low parasitic capacitance without sacrificing performance. Small devices (10µm or less in diameter) perform as well as the best lasers reported in the literature.

KW - lasers

KW - Vertical cavity surface emitting lasers

UR - https://www.scopus.com/pages/publications/0027913116

U2 - 10.1049/el:19931476

DO - 10.1049/el:19931476

M3 - Article

AN - SCOPUS:0027913116

SN - 0013-5194

VL - 29

SP - 2197

EP - 2199

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Integrable InGaAs/GaAs vertical-cavity surface-emitting lasers

Abstract

Keywords

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