Integrated bulk/SOI APD sensor: Bulk substrate inspection with Geiger-mode avalanche photodiodes

J. C. Jackson; J. Donnelly; B. O'Neill; A. M. Kelleher; G. Healy; A. P. Morrison; A. Mathewson

doi:10.1049/el:20030490

Integrated bulk/SOI APD sensor: Bulk substrate inspection with Geiger-mode avalanche photodiodes

J. C. Jackson
, J. Donnelly
, B. O'Neill
, A. M. Kelleher
, G. Healy
, A. P. Morrison
, A. Mathewson

School of Engineering and Architecture

Research output: Contribution to journal › Article › peer-review

Abstract

The bulk silicon quality after removal of the silicon-on-insulator (SOI) and buried oxide layer was compared with respect to the performance of avalanche photodiodes (APD) operated in Geiger-mode. The SOI technology enabled the detector and the readout circuitry to be electrically isolated. The plasma etching of the buried oxide showed lower dark counts with respect to wet etched or standard p-epi substrates.

Original language	English
Pages (from-to)	735-736
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	9
DOIs	https://doi.org/10.1049/el:20030490
Publication status	Published - 1 May 2003

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abstract = "The bulk silicon quality after removal of the silicon-on-insulator (SOI) and buried oxide layer was compared with respect to the performance of avalanche photodiodes (APD) operated in Geiger-mode. The SOI technology enabled the detector and the readout circuitry to be electrically isolated. The plasma etching of the buried oxide showed lower dark counts with respect to wet etched or standard p-epi substrates.",

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T2 - Bulk substrate inspection with Geiger-mode avalanche photodiodes

AU - Jackson, J. C.

AU - Donnelly, J.

AU - O'Neill, B.

AU - Kelleher, A. M.

AU - Healy, G.

AU - Morrison, A. P.

AU - Mathewson, A.

PY - 2003/5/1

Y1 - 2003/5/1

N2 - The bulk silicon quality after removal of the silicon-on-insulator (SOI) and buried oxide layer was compared with respect to the performance of avalanche photodiodes (APD) operated in Geiger-mode. The SOI technology enabled the detector and the readout circuitry to be electrically isolated. The plasma etching of the buried oxide showed lower dark counts with respect to wet etched or standard p-epi substrates.

AB - The bulk silicon quality after removal of the silicon-on-insulator (SOI) and buried oxide layer was compared with respect to the performance of avalanche photodiodes (APD) operated in Geiger-mode. The SOI technology enabled the detector and the readout circuitry to be electrically isolated. The plasma etching of the buried oxide showed lower dark counts with respect to wet etched or standard p-epi substrates.

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U2 - 10.1049/el:20030490

DO - 10.1049/el:20030490

M3 - Article

AN - SCOPUS:0038057984

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Integrated bulk/SOI APD sensor: Bulk substrate inspection with Geiger-mode avalanche photodiodes

Abstract

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