Abstract
We demonstrate ridge waveguide lasers based on AlInGaAs multiple quantum wells emitting at 1434 and 1541 nm on the same laser bar using quantum-well intermixing with dielectric capping layers. The internal quantum efficiencies are measured to be 61% and 72% and the internal losses are 49 and 23 c -1 for lasers with intermixing promoted and inhibited, respectively. The characteristic temperatures are found to be approximately 50 K for lasers emitting around 1433 nm and 75 K for those emitting around 1541 nm.
| Original language | English |
|---|---|
| Article number | 5613917 |
| Pages (from-to) | 27-29 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 23 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2011 |
Keywords
- Bandgap shift
- integration
- interdiffusion
- quantum-well intermixing (QWI)
- semiconductor lasers