Integration of O-band quantum dot lasers with AlGaN/GaN waveguides

We integrate edge-emitting etched-facet InAs/GaAs quantum dot (QD) lasers to an AlGaN/GaN-on-sapphire waveguide platform via micro-transfer printing. The lasers are placed into a trench etched into the sapphire substrate so as to transversely align the waveguides. The AlGaN/GaN waveguide structure is designed to allow for tolerant alignment of the active lasing mode to the passive waveguide mode. 4 µm wide waveguides show a TE propagation loss of 4.5 dB/cm. For a QD laser with a 1.2 mm long cavity and 3.5 µm wide ridge waveguide, 2.3 mW was measured at 80 mA under continuous wave conditions from the end of a 0.64 cm long 4 µm wide waveguide with an estimated coupling efficiency of >20 %. The measured coupled output power is 1.5 mW at 70°C and 100 mA. To our knowledge, this is the first demonstration of the heterogeneous integration of a GaAs lasing device to a GaN-based PIC by any means. The results show real promise for GaN to be a suitable platform for integrated photonics applications requiring O-band operation.