Interface of tantalum oxide films on silicon by UV annealing at low temperature

Q. Fang; J. Y. Zhang; Z. M. Wang; J. X. Wu; B. J. O'Sullivan; P. K. Hurley; T. L. Leedham; H. Davies; M. A. Audier; C. Jimenez; J. P. Senateur; Ian W. Boyd

doi:10.1016/S0040-6090(02)01280-4

Interface of tantalum oxide films on silicon by UV annealing at low temperature

Q. Fang
, J. Y. Zhang
, Z. M. Wang
, J. X. Wu
, B. J. O'Sullivan
, P. K. Hurley
, T. L. Leedham
, H. Davies
, M. A. Audier
, C. Jimenez
, J. P. Senateur
, Ian W. Boyd

University College London
University of Science and Technology of China
Inorgtech Limited
Institut polytechnique de Grenoble
J.I.P. Elec

Research output: Contribution to journal › Article › peer-review

Abstract

In previous work, we have grown 4-10 nm Ta₂O₅ films by photo-induced chemical vapour deposition (photo-CVD) using a special precursor injection system, which exhibited leakage currents as low as 2.19×10^-7 A/cm² at 1 MV/cm. However properties of these films are known to deteriorate with decreasing film thickness. UV annealing at low temperatures using an excimer UV source can improve the electrical properties of these films dramatically. In this paper, tantalum pentoxide thin films with thicknesses of approximately 40 nm grown by photo-CVD have been annealed at low temperature using an excimer UV lamp. Film properties have been characterised using ellipsometry, Fourier transform infrared spectroscopy, UV spectrophotometry, capacitance-voltage and current-voltage techniques. After UV annealing, improved leakage current densities as low as 4.0×10^-8 A/cm² at 1 MV/cm, and breakdown fields higher than 3.0 MV/cm can be achieved. Investigation of the interfacial SiO_x layer formed during deposition and after UV annealing by X-ray photoelectron spectroscopy and TEM reveals that thickness increases with UV annealing time and that the suboxides in the film and at the interface are converted into stoichiometric oxide, leading to an improvement of the electrical properties.

Original language	English
Pages (from-to)	248-252
Number of pages	5
Journal	Thin Solid Films
Volume	428
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)01280-4
Publication status	Published - 20 Mar 2003
Event	Proceedings of Symposium J on Growth and Evolution - Strasbourg, France Duration: 18 Jun 2002 → 21 Jun 2002

Keywords

Gate dielectrics
Interfacial SiO layer
Tantalum pentoxide
UV annealing

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10.1016/S0040-6090(02)01280-4

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title = "Interface of tantalum oxide films on silicon by UV annealing at low temperature",

abstract = "In previous work, we have grown 4-10 nm Ta2O5 films by photo-induced chemical vapour deposition (photo-CVD) using a special precursor injection system, which exhibited leakage currents as low as 2.19×10-7 A/cm2 at 1 MV/cm. However properties of these films are known to deteriorate with decreasing film thickness. UV annealing at low temperatures using an excimer UV source can improve the electrical properties of these films dramatically. In this paper, tantalum pentoxide thin films with thicknesses of approximately 40 nm grown by photo-CVD have been annealed at low temperature using an excimer UV lamp. Film properties have been characterised using ellipsometry, Fourier transform infrared spectroscopy, UV spectrophotometry, capacitance-voltage and current-voltage techniques. After UV annealing, improved leakage current densities as low as 4.0×10-8 A/cm2 at 1 MV/cm, and breakdown fields higher than 3.0 MV/cm can be achieved. Investigation of the interfacial SiOx layer formed during deposition and after UV annealing by X-ray photoelectron spectroscopy and TEM reveals that thickness increases with UV annealing time and that the suboxides in the film and at the interface are converted into stoichiometric oxide, leading to an improvement of the electrical properties.",

keywords = "Gate dielectrics, Interfacial SiO layer, Tantalum pentoxide, UV annealing",

author = "Q. Fang and Zhang, \{J. Y.\} and Wang, \{Z. M.\} and Wu, \{J. X.\} and O'Sullivan, \{B. J.\} and Hurley, \{P. K.\} and Leedham, \{T. L.\} and H. Davies and Audier, \{M. A.\} and C. Jimenez and Senateur, \{J. P.\} and Boyd, \{Ian W.\}",

year = "2003",

month = mar,

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doi = "10.1016/S0040-6090(02)01280-4",

language = "English",

volume = "428",

pages = "248--252",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

note = "Proceedings of Symposium J on Growth and Evolution ; Conference date: 18-06-2002 Through 21-06-2002",

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TY - JOUR

T1 - Interface of tantalum oxide films on silicon by UV annealing at low temperature

AU - Fang, Q.

AU - Zhang, J. Y.

AU - Wang, Z. M.

AU - Wu, J. X.

AU - O'Sullivan, B. J.

AU - Hurley, P. K.

AU - Leedham, T. L.

AU - Davies, H.

AU - Audier, M. A.

AU - Jimenez, C.

AU - Senateur, J. P.

AU - Boyd, Ian W.

PY - 2003/3/20

Y1 - 2003/3/20

N2 - In previous work, we have grown 4-10 nm Ta2O5 films by photo-induced chemical vapour deposition (photo-CVD) using a special precursor injection system, which exhibited leakage currents as low as 2.19×10-7 A/cm2 at 1 MV/cm. However properties of these films are known to deteriorate with decreasing film thickness. UV annealing at low temperatures using an excimer UV source can improve the electrical properties of these films dramatically. In this paper, tantalum pentoxide thin films with thicknesses of approximately 40 nm grown by photo-CVD have been annealed at low temperature using an excimer UV lamp. Film properties have been characterised using ellipsometry, Fourier transform infrared spectroscopy, UV spectrophotometry, capacitance-voltage and current-voltage techniques. After UV annealing, improved leakage current densities as low as 4.0×10-8 A/cm2 at 1 MV/cm, and breakdown fields higher than 3.0 MV/cm can be achieved. Investigation of the interfacial SiOx layer formed during deposition and after UV annealing by X-ray photoelectron spectroscopy and TEM reveals that thickness increases with UV annealing time and that the suboxides in the film and at the interface are converted into stoichiometric oxide, leading to an improvement of the electrical properties.

AB - In previous work, we have grown 4-10 nm Ta2O5 films by photo-induced chemical vapour deposition (photo-CVD) using a special precursor injection system, which exhibited leakage currents as low as 2.19×10-7 A/cm2 at 1 MV/cm. However properties of these films are known to deteriorate with decreasing film thickness. UV annealing at low temperatures using an excimer UV source can improve the electrical properties of these films dramatically. In this paper, tantalum pentoxide thin films with thicknesses of approximately 40 nm grown by photo-CVD have been annealed at low temperature using an excimer UV lamp. Film properties have been characterised using ellipsometry, Fourier transform infrared spectroscopy, UV spectrophotometry, capacitance-voltage and current-voltage techniques. After UV annealing, improved leakage current densities as low as 4.0×10-8 A/cm2 at 1 MV/cm, and breakdown fields higher than 3.0 MV/cm can be achieved. Investigation of the interfacial SiOx layer formed during deposition and after UV annealing by X-ray photoelectron spectroscopy and TEM reveals that thickness increases with UV annealing time and that the suboxides in the film and at the interface are converted into stoichiometric oxide, leading to an improvement of the electrical properties.

KW - Gate dielectrics

KW - Interfacial SiO layer

KW - Tantalum pentoxide

KW - UV annealing

UR - https://www.scopus.com/pages/publications/0037457167

U2 - 10.1016/S0040-6090(02)01280-4

DO - 10.1016/S0040-6090(02)01280-4

M3 - Article

AN - SCOPUS:0037457167

SN - 0040-6090

VL - 428

SP - 248

EP - 252

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of Symposium J on Growth and Evolution

Y2 - 18 June 2002 through 21 June 2002

ER -

Interface of tantalum oxide films on silicon by UV annealing at low temperature

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Keywords

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