Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO 2 gate dielectric

  • Muhammad Adi Negara
  • , Niti Goel
  • , Daniel Bauza
  • , Gerard Ghibaudo
  • , Paul K. Hurley

Research output: Contribution to journal › Article › peer-review

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